00:02 Concept of biasing and its qualities 01:59 Biasing techniques exploit exponential behavior for gain. 07:00 Temperature independent biasing concept 09:37 IC can be expressed as (VCC - VBE) / (RB + (re / beta)), showcasing dependence on beta and RB. 15:16 Choosing the value of RC for an amplifier 17:33 Basic biasing concepts for transistor circuits. 22:10 Biasing with resistors limits transistor gain. 24:21 Biasing techniques can reduce dependency on transistor specifics. 29:23 Common emitter and common source are essentially the same fundamental stage. Crafted by Merlin AI.
That is at the edge of saturation. If Vce=0.2V at the edge of saturation, Vc=1.2V, and Vb=1.7. So Vbc=0.5V. The diode in bc junction at the edge of forward bias (typically bc junction should be in reverse biased to stay in active region). So, both be and bc junctions are going to forward bias, which is at the edge of saturation.
Sir I have one question, Vbe(base to collector voltage) in BJT is fixed like 0.7 for silicon or Does it varies according to Ic(collector current) because in few numericals, They have given silicon transistor but they are finding Vbe(base to emitter voltage) by using (Ic=e power Vbe/Vt) and then they solved further it.
As stated in the video, Vbe=0.7 is an approximation (initial value if you are doing iterative solutions) for typical currents (e.g., 1mA) and typical silicon integrated circuit BJTs (e.g., 1e15). It varies slowly with the Ic because of logarithmic dependence and small value of Vt (25mV at room temperature), as stated in the video.
It ended up with the same circuit in @1:46. The fluctuation on the Vcc induce small fluctuation on the base current, and Ic = beta*Ib ended up with large fluctuation.
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00:02 Concept of biasing and its qualities
01:59 Biasing techniques exploit exponential behavior for gain.
07:00 Temperature independent biasing concept
09:37 IC can be expressed as (VCC - VBE) / (RB + (re / beta)), showcasing dependence on beta and RB.
15:16 Choosing the value of RC for an amplifier
17:33 Basic biasing concepts for transistor circuits.
22:10 Biasing with resistors limits transistor gain.
24:21 Biasing techniques can reduce dependency on transistor specifics.
29:23 Common emitter and common source are essentially the same fundamental stage.
Crafted by Merlin AI.
How do we pick Imax (2mA) at 21:20? Do we just assume that it has to be twice as large as the quiescent current (1mA)?
Awesome video, I have a bachelor's degree in Electronics. Still I learnt so much from this video!
this is a master level course
At 20:16, why is Vce=0.2V at the edge of saturation? Thought it was something like 0.8V.
That is at the edge of saturation. If Vce=0.2V at the edge of saturation, Vc=1.2V, and Vb=1.7. So Vbc=0.5V. The diode in bc junction at the edge of forward bias (typically bc junction should be in reverse biased to stay in active region). So, both be and bc junctions are going to forward bias, which is at the edge of saturation.
At 7:35 why there is no Rπ ,at 1ma of collector current it is about 2.5k
Very good !
Sir I have one question, Vbe(base to collector voltage) in BJT is fixed like 0.7 for silicon or Does it varies according to Ic(collector current) because in few numericals, They have given silicon transistor but they are finding Vbe(base to emitter voltage) by using (Ic=e power Vbe/Vt) and then they solved further it.
As stated in the video, Vbe=0.7 is an approximation (initial value if you are doing iterative solutions) for typical currents (e.g., 1mA) and typical silicon integrated circuit BJTs (e.g., 1e15). It varies slowly with the Ic because of logarithmic dependence and small value of Vt (25mV at room temperature), as stated in the video.
what will happen if we take Rb=0 ohm
It ended up with the same circuit in @1:46. The fluctuation on the Vcc induce small fluctuation on the base current, and Ic = beta*Ib ended up with large fluctuation.