GaN High Electron Mobility Transistors for power switching applications - Farid Medjdoub (CNRS-IEMN)

This lecture on GaN HEMTs was given by our YESvGaN partner Farud Medjdoub from CNRS-IEMN on the SSIE summer PhD school 2022 in Brixen, Italy. More information about the SSIE summer school can be found here: ssie.dei.unipd...
The YESvGaN project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union’s Horizon 2020 research & innovation program and Germany, France, Belgium, Austria, Sweden, Spain, Italy.