- Видео 18
- Просмотров 13 175
YESvGaN
Добавлен 15 июн 2021
YESvGaN - Wide Band Gap Power at Silicon Cost
YESvGaN develops a new class of vertical GaN membrane power transistors for efficient and affordable power conversion at high voltages and high currents.
This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union’s Horizon 2020 research & innovation program and Germany, France, Belgium, Austria, Sweden, Spain, Italy
YESvGaN develops a new class of vertical GaN membrane power transistors for efficient and affordable power conversion at high voltages and high currents.
This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union’s Horizon 2020 research & innovation program and Germany, France, Belgium, Austria, Sweden, Spain, Italy
Power transistor manufacturing flow - Salvatore Coffa (STMicroelectronics)
This lecture on power transistor manufacturing flow: starting with Si moving into SiC and GaN by Salvatore Coffa of STMicroelectronics on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023
This summer school has been made possible through the support of the Flemish Government and the Doctoral Schools of Ghent University.
The YESvGaN project has received funding by the ECSEL JU under Grant Agreement No 101007229. The TRANSFORM project has received funding by KDT JU under Grant Agreement No 101007237. The JU receives support from the European Union’s Horizon 2020 research and innovat...
This summer school has been made possible through the support of the Flemish Government and the Doctoral Schools of Ghent University.
The YESvGaN project has received funding by the ECSEL JU under Grant Agreement No 101007229. The TRANSFORM project has received funding by KDT JU under Grant Agreement No 101007237. The JU receives support from the European Union’s Horizon 2020 research and innovat...
Просмотров: 969
Видео
SiC and GaN for power electronics: 2 markets driven by different growth engines - Taha Ayari (Yole)
Просмотров 95110 месяцев назад
This lecture on SiC and GaN for power electronics: 2 markets driven by different growth engines was given by Taha Ayari of Yole Intelligence on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government and...
Industrialization, standardization and packaging - Martin Rittner (Bosch)
Просмотров 25210 месяцев назад
This lecture on industralization, packaging and standarization was given by Martin Rittner of Bosch on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government and the Doctoral Schools of Ghent University...
Reliability and stability of GaN devices - Nicolò Zagni (IUNET-UNIMORE)
Просмотров 41110 месяцев назад
This lecture on reliability and stability of GaN devices was given by Nicolò Zagni of IUNET-UNIMORE on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government and the Doctoral Schools of Ghent University...
Reliability and stability of SiC devices: New dynamic robustness tests - Tobias Reimann (ISLE)
Просмотров 41910 месяцев назад
This lecture on reliability and stability of SiC devices: new dynamic robustness tests (DRB and dyn.H3TRB) was given by Tobias Reimann of ISLE on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government a...
Vertical GaN on foreign substrates: The YESvGaN approach - Christian Huber (Bosch)
Просмотров 52710 месяцев назад
This lecture on vertical GaN on foreign substrates: the YESvGaN approach was given by Christian Huber of Bosch on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government and the Doctoral Schools of Ghent...
Soitec SmartCut for SiC engineering substrate: SmartSiC(TM) - Walter Schwarzenbach (Soitec)
Просмотров 91810 месяцев назад
This lecture on wide band gap power transistors for electrified mobility was given by Walter Schwarzenbach of Soitec on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government and the Doctoral Schools of...
The status and challenges of making GaN crystals and wafers - Elke Meissner (Fraunhofer IISB)
Просмотров 48910 месяцев назад
This lecture on the status and challenges of making GaN crystals and wafers and characterization of device relevant issues was given by Elke Meissner of Fraunhofer IISB on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support o...
Epitaxial growth of GaN and SiC - Bernd Schineller (AIXTRON SE)
Просмотров 1,8 тыс.10 месяцев назад
This lecture on epitaxial growth of GaN and SiC was given by Bernd Schineller of AIXTRON SE on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government and the Doctoral Schools of Ghent University. The YE...
GaN high electron mobility transistors for power switching applications - Farid Medjdoub (CNRS)
Просмотров 48110 месяцев назад
This lecture on GaN high electron mobility transistors for power switching applications was given by Farid Medjdoub of CNRS on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government and the Doctoral Sch...
Wide band gap power transistors for electrified mobility - Klaus Heyers (Bosch)
Просмотров 59410 месяцев назад
This lecture on wide band gap power transistors for electrified mobility was given by Klaus Heyers of Bosch on the YESvGaN-TRANSFORM-PowerElec Phd summer school in Ghent, Belgium. More information about the summer school can be found here: yesvgan.eu/en/summer_school_2023 This summer school has been made possible through the support of the Flemish Government and the Doctoral Schools of Ghent Un...
GaN High Electron Mobility Transistors for power switching applications - Farid Medjdoub (CNRS-IEMN)
Просмотров 512Год назад
This lecture on GaN HEMTs was given by our YESvGaN partner Farud Medjdoub from CNRS-IEMN on the SSIE summer PhD school 2022 in Brixen, Italy. More information about the SSIE summer school can be found here: ssie.dei.unipd.it/ The YESvGaN project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union’s Horizo...
GaN industrialization: From lateral to vertical - Christian Huber (Bosch)
Просмотров 778Год назад
This lecture on GaN industrialization was given by our YESvGaN partner Christian Huber from Bosch on the SSIE summer PhD school 2022 in Brixen, Italy. More information about the SSIE summer school can be found here: ssie.dei.unipd.it/ The YESvGaN project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union...
GaN HEMT modelling: a tutorial - Giovanni Verzellesi (University of Modena and Reggio Emilia)
Просмотров 1 тыс.Год назад
This lecture on GaN HEMT modelling was given by our YESvGaN partner Giovanni Verzellesi from the University of Modena and Reggio Emilia on the SSIE summer PhD school 2022 in Brixen, Italy. More information about the SSIE summer school can be found here: ssie.dei.unipd.it/ The YESvGaN project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU re...
GaN Epitaxy: Novel Aspects and Perspectives - Bernd Schniller (AIXTRON)
Просмотров 2,4 тыс.Год назад
GaN Epitaxy: Novel Aspects and Perspectives - Bernd Schniller (AIXTRON)
Structural and Electrical Characterization of Nitrides for Electronic Devices - Elke Meissner (IISB)
Просмотров 334Год назад
This lecture on characterization of nitrides was given by our YESvGaN partner Elke Meissner from Fraunhofer IISB and the University of Erlangen on the SSIE summer PhD school 2022 in Brixen, Italy. More information about the SSIE summer school can be found here: ssie.dei.unipd.it/ The YESvGaN project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. T...
Young researchers of Materials Center Leoben Forschung Gmbh (MCL) say YESvGaN!
Просмотров 137Год назад
Young researchers of Materials Center Leoben Forschung Gmbh (MCL) say YESvGaN!
YESvGaN - Wide Band Gap Power at Silicon Cost
Просмотров 3122 года назад
YESvGaN - Wide Band Gap Power at Silicon Cost
cant hear properly!
Terrible sound
Atomeras mst for the channel ion implantation crystal lattice layer!
I have one doubt, As you mentioned during NBTI, a Negative Vth shift has occurred in MIS HEMT due to the depletion of the defects. But if the Vth shift is positive, then what will you suggest??