When you say stress around 5:30, do you mean mechanical stress? How is mechanical stress caused by excess ions? I can see how excess ions change the doping of the S/D regions in the transistor and change its Vt/mobility etc. But how does it cause mechanical stress? Thanks
if photoresistor is scattering my ions then why we will not remove that before ion implantation? basically below that one oxide layer is present to select particular area for ion implantation
venkat , i've few doubts in this 2 topic's , so it will take time , i know the concepts , but i've make understood that to everyone , so i need time , sorry for the delay
Hi... if you observe the diagram you are doing ion implantation with an angle right, in that scenario the transistor which are placed left corner side only affected.. how will the right corner transistor affected?
Hi . You said ion implantation done with 7 degree angle.. then both edges will effect.. but if we done with 90 degrees then there is no chance to hit the edges then there is no chance to WPE? WHY we not do with 90 degrees ion implantation? If do what happened?
90 degree implantation also will give other problems , so after doing many research they found , 7 degree implantation is better then others , but its having only one problem WEP , so they are following that
@@analoglayout k but I heard for source and drain also we do 7 degrees.. depth of the well is high compare to source and drain regions.. how control depth.. ?
@@dosapatikrishnakumar6569 See if ion implantation is done at 90 degree angle, a issue will comeup known as Channeling effect (penetration of ions to undesired depths), so they tilt the beam 7-9 degrees to overcome this effect. if you want to study in details go through art of analog layout by Alan Hastings.
The ions are what is causing the Doping of either the substrate or the Source/Drain diffusion. If not for WPE, the doping would be uniform. What scattered ions are doing is causing non-uniformity in the doping which affects the specifications (Vt, KP) of the transistor sections that are too close to the well.
for easy drawing , i chosen nmos , wpe will affect all the device which s near by well boundary , i.e nmos , pmos , resister , capacitor , all the active and passive devices
Thanks naba, never forget WPE in my life
Thank you. It was impeccable.
Thank you bro...Its in need for all guys who r really preparing for interview and also working guys will be not knowing about the concept's.
thx for ur comment
Really it's helpful for me thank you 😊
Thank you sir. Very useful
nice one👏
When you say stress around 5:30, do you mean mechanical stress? How is mechanical stress caused by excess ions? I can see how excess ions change the doping of the S/D regions in the transistor and change its Vt/mobility etc. But how does it cause mechanical stress? Thanks
nicely explained ...thanks
Super explanation sir
if photoresistor is scattering my ions then why we will not remove that before ion implantation? basically below that one oxide layer is present to select particular area for ion implantation
Please add and explain some more concepts, very helpful source
For which layer are we doing ion implantation
Source & drain
can we simulate this effect?
Yes you can
sir will u plz upload SHALLOW TRENCH ISOLATION AND DEEP N-WELL
venkat , i've few doubts in this 2 topic's , so it will take time , i know the concepts , but i've make understood that to everyone , so i need time , sorry for the delay
nice ....thank you.... want video on short channel effects
already WPE , i posted , STI , LOD , is left .... as soon il post
@@analoglayout what is purpose of ion implanation process & why??, and why ion implanatation is doing in only 7 degree angle??
Hi sir,
How Vt will change -10% based on scattered ions can you please explain
Vt variations will be thr , for ex 10% , it may even more High or low , it's just a random %
How does effect is only on sides? It can be on all sides also?
All the sides
Hi... if you observe the diagram you are doing ion implantation with an angle right, in that scenario the transistor which are placed left corner side only affected.. how will the right corner transistor affected?
ion implantation done by 7 degree angle , so both corner will be affected , i cant able to draw exact diagram ,
Can u pls list the second order effects? Whether we have 1st order too in analog layout?
WPE,LOD , STI ,DIBL , this topic is 2nd order , i will try to post asap
Hi . You said ion implantation done with 7 degree angle.. then both edges will effect.. but if we done with 90 degrees then there is no chance to hit the edges then there is no chance to WPE? WHY we not do with 90 degrees ion implantation? If do what happened?
90 degree implantation also will give other problems , so after doing many research they found , 7 degree implantation is better then others , but its having only one problem WEP , so they are following that
@@analoglayout k but I heard for source and drain also we do 7 degrees.. depth of the well is high compare to source and drain regions.. how control depth.. ?
Bro what are the problems.. using 90 degrees ? If not possible to share here then mail me.. thanks
read , art of analog layout ... book . . . .
@@dosapatikrishnakumar6569 See if ion implantation is done at 90 degree angle, a issue will comeup known as Channeling effect (penetration of ions to undesired depths), so they tilt the beam 7-9 degrees to overcome this effect.
if you want to study in details go through art of analog layout by Alan Hastings.
Plz upload video on electro static discharge
ESD will be available soon
Is WPE also will effect NMOSES if it places near to WELL ?
Ys
can you please upload videos on internal structure of end cap cells,tap cells, decap cells
Lemme try , if available
Can you please explain in detail how VT of the transistor varies?
watch body bios video , u will get some idea
@@analoglayout OK. Thank u
your welcome
WILL THE Vth OF MY MOSFET DEPENDS ON TRANSISTOR WIDTH AND LENGTH?
VT depand on , so many things . L , W , poly resistance , cgb , doping on poly , etc
Sir plzzz upload more related to layout sire
Can you please tell me in detailed how the scattered ions are affecting the nearby device in terms of charge carries.
The ions are what is causing the Doping of either the substrate or the Source/Drain diffusion. If not for WPE, the doping would be uniform. What scattered ions are doing is causing non-uniformity in the doping which affects the specifications (Vt, KP) of the transistor sections that are too close to the well.
its vary the vt of the n mos or not
it will vary the vt , for all mos
but in video u are mentioned only pmos only thats why im asking
for easy drawing , i chosen nmos , wpe will affect all the device which s near by well boundary , i.e nmos , pmos , resister , capacitor , all the active and passive devices
hi sir if you don't mind can you please explain deep nwell process also
IL do that
sir make a video on ESD
Sure ... I'll do
cmos fabracation vanum sir
next video is ur video only bro ... im working on it
explain in cross section view ........