source side depletion region cant increase because source is grounded as well as body is grounded too. so here barrier lowering is between source and channel.
Hi Edu, If you want to have more audiences for your channel, please create more videos about MOSFET just like this video. Since the background is EE, it is easy to step in semiconductor field such as FINFET. That is one of the ways for you can have more audiences. Wish you the best.
I don't know why they draw higher voltage at lower curve... If this could be calculated somehow it could make it clear. Maybe one of the good explanations found.
www.semanticscholar.org/paper/Gate-Induced-Drain-Leakage-Current-in-45-nm-CMOS-Yuan-Park/d8ae3db50fdf372b2442a625608be03012c34923 Please refer to the graph to understand current and electron profiles in detail. For energy band diagram and electron profile you can refer to figure 3 of below link www.researchgate.net/figure/Band-diagrams-of-a-gate-substrate-junction-and-b-gate-drain-edge-for-an-nFET_fig3_3140206
Hi Rajneesh, Drain voltage is always more than source voltage but has been represented by a low level curve . Typically drain voltage for short channels are 1.5 -1.8 V
After lot of search here is a nice explanation
much better than other lenghty monotonous videos
thank you
your explanation is clear and easy to understand, thank you
Very nice explanation! thanks
Very well explained sir !!
Nice explanation.
VERY NICE EXPLANATION
source side depletion region cant increase because source is grounded as well as body is grounded too. so here barrier lowering is between source and channel.
Hi Edu, If you want to have more audiences for your channel, please create more videos about MOSFET just like this video. Since the background is EE, it is easy to step in semiconductor field such as FINFET. That is one of the ways for you can have more audiences. Wish you the best.
Sure, we resumed it now. We'll put videos on Finfet soon
Nice explanation sir. Simple way of explanation for complex things is always good. Keep posting more videos like this
Thank you, I will . Keep watching!
Very well explain sir...
Good explanation
nice one bro
Great 👍👏👏🥰
I don't know why they draw higher voltage at lower curve... If this could be calculated somehow it could make it clear.
Maybe one of the good explanations found.
Hey what is that electron profile? Can someone explain it?
www.semanticscholar.org/paper/Gate-Induced-Drain-Leakage-Current-in-45-nm-CMOS-Yuan-Park/d8ae3db50fdf372b2442a625608be03012c34923
Please refer to the graph to understand current and electron profiles in detail.
For energy band diagram and electron profile you can refer to figure 3 of below link
www.researchgate.net/figure/Band-diagrams-of-a-gate-substrate-junction-and-b-gate-drain-edge-for-an-nFET_fig3_3140206
Well explained
YOU HAVE EXPLAINED VERY WELL, EAGER TO SEE MORE VIDEOS. PLEASE MAKE MORE VIDEOS ON ANALOG CIRCUITS AND LAYOUTS
Sure. I will upload for sure
What is drain voltage
Hi Rajneesh,
Drain voltage is always more than source voltage but has been represented by a low level curve . Typically drain voltage for short channels are 1.5 -1.8 V
When both the depletion regions met the device will off.am I correct ?
Please correct me if i was wrong
Yes true that
Thanks a lot
Most welcome!
good explanaton
bro please make a video on GIDL ....
Sure , I will put it out soon
great.
Great, thanks
is drain induced barrier lowerig and punch throw effect are same
Helpful explanation 🙏