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Welcome. You can write me at educraft.vision@gmail.com ...will do the needful

Morning

My pleasure ! Happy learning 🎆 Thanks for watching

Thank you Shivam ! Not really from NIT JSR

yes , using High-k/Metal Gate (HKMG) Technology: High-k dielectrics and metal gates can be used to replace traditional silicon dioxide gates. High-k materials have a higher dielectric constant, which allows for a thicker gate dielectric without compromising performance, thereby reducing gate leakage. Other techniques are GAA, FinFETs, Fully depleted SOI . Hope it helped. Thanks for watching the video.

@@semitech01 is it possible to use high k/metal gate in Gaafet

​ Yes, it is possible to use high-k/metal gate (HKMG) technology in Gate-All-Around Field-Effect Transistors (GAAFETs) to reduce leakage current. The integration of high-k dielectrics and metal gates in GAAFETs can significantly enhance their performance by improving gate control and reducing gate leakage. For more you can refer below paper www.researchgate.net/publication/4357573_45nm_High-k_metal_gate_strain-enhanced_transistors

@@azamatbezhan1653 Yes, it is possible to use high-k/metal gate (HKMG) technology in Gate-All-Around Field-Effect Transistors (GAAFETs) to reduce leakage current. The integration of high-k dielectrics and metal gates in GAAFETs can significantly enhance their performance by improving gate control and reducing gate leakage. To know more you can refer : www.researchgate.net/publication/4357573_45nm_High-k_metal_gate_strain-enhanced_transistors

@@semitech01 best answer

The output won't depend on Vt because we are considering the NMOS to be ideal, so it acts as a short-circuit path when we apply Vdd as input, and the load capacitor will discharge through the NMOS

yes, ideally it should be zero but practically it should be of negligible resistance..in the order of few ohms..

Glad it was helpful!

Bcz drain leakage current is induced by the gate. Apparently, as vds increases Vdg increases as well..which leads to overcome of gate and drain region beneath the gate. Which leads to leakage current.( As explained in the video) Thereby without taking Vdg into context one can't analyse it. Hope you are able to comprehend.

Thank you

Thanks! Great Learning ..

Most welcome!

In general, Vgs controls the current in the MOSFET . So, with the increase in Vgs current increases and thereby output voltage decreases. But to give a context how we can achieve the maximum output voltage when we consider PMOS as pull down. I said if we increase the Vgs output decreases so we have to decease the Vgs to get higher Vo up to an extent that PMOS stays ON. which is when Vgs=vt . That gives the maximum output of VDD-Vt. Hope it helped !

you are right about CLM. Clarifying the point about a decrease in channel length, it refers to transitioning from higher to lower technology nodes(3:07). In lower tech nodes, the channel length is shorter, requiring less Vds to achieve the same current compared to higher nodes. Hope it clarifies ur point.

Nice to know 😊 Happy learning!

Hi Rajneesh, Drain voltage is always more than source voltage but has been represented by a low level curve . Typically drain voltage for short channels are 1.5 -1.8 V

Thank you so much! Happy learning:)

You welcome. Happy learning:)

www.semanticscholar.org/paper/Gate-Induced-Drain-Leakage-Current-in-45-nm-CMOS-Yuan-Park/d8ae3db50fdf372b2442a625608be03012c34923 Please refer to the graph to understand current and electron profiles in detail. For energy band diagram and electron profile you can refer to figure 3 of below link www.researchgate.net/figure/Band-diagrams-of-a-gate-substrate-junction-and-b-gate-drain-edge-for-an-nFET_fig3_3140206

Hey Sreemukhi kottada you can find it here - www0.cs.ucl.ac.uk/staff/ucacdxq/projects/vlsi/report.pdf

Sure, will put soon

Thanks! Happy Learning

Thank you:) Happy learning!

Thank you, I will . Keep watching!

Great to know that you liked this video. I believe it's not a good idea to have a video in reference. But I can share a couple of references (papers & books) which you could give for the reference for GIDL. You can mail me at niranjan.rvceit@gmail.com