i only saw them in high speed devices like GANfet from what switching frequency does this become a necessary ? Also wouldnt be easier to simply use a higher drive voltage?
The kelvin connection is used in new SiC an GaN FET devices, mostly due to ther insane switching speeds, which generates substantial voltage drops across the source inductance. A higher drive voltage would NOT solve the problem! It would increase driver power dissipation, also modern FETs have lower limits for gate drive voltage.
@@JacquesMartini I would agree this works for eliminating PGND issues, but usually I see Rds sensing for current control, where you may want to have full kelvin output.
Thank you professor. All respect from Iran
👍🙏
Insightful presentation. Thanks, dear Professor.
So nice of you. Thanks.
As always, thank-you professor
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Thank you professor, accurate presentation as always.
Thanks. Much appreciated
perfect
Thanks
As basic (based) as important. A lot. Thanks!
Thanks
Why not have unique floating drivers for each FET and avoid the ground loops?
Possible, but more expensive.
Cost
very informative. thanks.
Thanks for watching!
i only saw them in high speed devices like GANfet from what switching frequency does this become a necessary ?
Also wouldnt be easier to simply use a higher drive voltage?
The kelvin connection is used in new SiC an GaN FET devices, mostly due to ther insane switching speeds, which generates substantial voltage drops across the source inductance. A higher drive voltage would NOT solve the problem! It would increase driver power dissipation, also modern FETs have lower limits for gate drive voltage.
Indeed. Thanks.
But why it is only from source and not from drain?
Because the gate voltage is referenced to source, not drain.
Indeed. Thanks.
@@JacquesMartini I would agree this works for eliminating PGND issues, but usually I see Rds sensing for current control, where you may want to have full kelvin output.
@@sXAPOLLls How many MOSFETs have a kelvin connection on drain? 1% or less?