ROG STRIX ARION X Samsung SSD 980 M.2

ROG Strix Arion M.2 NVMe SSD Enclosure-USB3.2 Gen 2x1 Type-C (10 Gbps), Dual USB-C to C and USB-C to A Cables, Screwdriver-Free, Thermal Pads Included, Fits PCIe 2280/2260/2242/2230 M key/B+M Key
USB-C™ 3.2 Gen 2x1 for speeds ofup to 10 Gbps
Supports M.2 PCIe NVM Express® SSD with 2230/2242/2260/2280 form factor
Innovative, easy-to-use screwdriver-freeinstallation
Aluminum alloy case and thermal pads deliver aggressive heat dissipation
Exclusive hanging protective holder included
Dual USB-C to C and USB-C to A cables included
Futuristic design features ASUS Aura Sync lighting effects
SAMSUNG SSD 980 M.2
Specifications
-Model Code (Capacity)1)
MZ-V8V1T0BW (1TB)
General Feature
APPLICATION
Client PCs
FORM FACTOR
M.2 (2280)
INTERFACE
PCIe® Gen 3.0 x4, NVMe™ 1.4
DIMENSION (WxHxD)
80.15 x 22.15 x 2.38 (mm)
WEIGHT
Max 8.0 g
STORAGE MEMORY
Samsung V-NAND 3-bit MLC
CONTROLLER
Samsung In-House Controller
CACHE MEMORY
HMB(Host Memory Buffer)
Special Feature
TRIM SUPPORT
Supported
S.M.A.R.T SUPPORT
Supported
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0)
TCG/Opal IEEE1667 (Encrypted drive)
WWN SUPPORT
Not Supported
DEVICE SLEEP MODE SUPPORT
Yes
Performance2)
SEQUENTIAL READ
250GB: Up to 2,900 MB/s
500GB: Up to 3,100 MB/s
1TB: Up to 3,500 MB/s
SEQUENTIAL WRITE
250GB: Up to 1,300 MB/s
500GB: Up to 2,600 MB/s
1TB: Up to 3,000 MB/s
RANDOM READ (4KB, QD32)
250GB: Up to 230,000 IOPS
500GB: Up to 400,000 IOPS
1TB: Up to 500,000 IOPS
RANDOM WRITE (4KB, QD32)
250GB: Up to 320,000 IOPS
500GB: Up to 470,000 IOPS
1TB: Up to 480,000 IOPS
RANDOM READ (4KB, QD1)
250GB: Up to 17,000 IOPS
500GB: Up to 17,000 IOPS
1TB: Up to 17,000 IOPS
RANDOM WRITE (4KB, QD1)
250GB: Up to 53,000 IOPS
500GB: Up to 54,000 IOPS
1TB: Up to 54,000 IOPS
Environment
AVERAGE POWER CONSUMPTION
(SYSTEM LEVEL)3)
250GB: Average 3.7 W Maximum 5.6 W (Burst mode)
500GB: Average 4.3 W Maximum 5.9 W (Burst mode)
1TB: Average 4.6 W Maximum 5.3 W (Burst mode)
POWER CONSUMPTION (IDLE)3)
Max. 45 mW
POWER CONSUMPTION (DEVICE SLEEP)
Max. 5 mW
ALLOWABLE VOLTAGE
3.3 V ± 5 % Allowable voltage
RELIABILITY (MTBF)
1.5 Million Hours Reliability
OPERATING TEMPERATURE
0 - 70 ℃
SHOCK
1,500 G & 0.5 ms (Half sine)
Specifications
Model Code (Capacity)1)
MZ-V8V250BW (250GB)
MZ-V8V500BW (500GB)
MZ-V8V1T0BW (1TB)
General Feature
APPLICATION
Client PCs
FORM FACTOR
M.2 (2280)
INTERFACE
PCIe® Gen 3.0 x4, NVMe™ 1.4
DIMENSION (WxHxD)
80.15 x 22.15 x 2.38 (mm)
WEIGHT
Max 8.0 g
STORAGE MEMORY
Samsung V-NAND 3-bit MLC
CONTROLLER
Samsung In-House Controller
CACHE MEMORY
HMB(Host Memory Buffer)
Special Feature
TRIM SUPPORT
Supported
S.M.A.R.T SUPPORT
Supported
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0)
TCG/Opal IEEE1667 (Encrypted drive)
WWN SUPPORT
Not Supported
DEVICE SLEEP MODE SUPPORT
Yes
Performance2)
SEQUENTIAL READ
250GB: Up to 2,900 MB/s
500GB: Up to 3,100 MB/s
1TB: Up to 3,500 MB/s
SEQUENTIAL WRITE
250GB: Up to 1,300 MB/s
500GB: Up to 2,600 MB/s
1TB: Up to 3,000 MB/s
RANDOM READ (4KB, QD32)
250GB: Up to 230,000 IOPS
500GB: Up to 400,000 IOPS
1TB: Up to 500,000 IOPS
RANDOM WRITE (4KB, QD32)
250GB: Up to 320,000 IOPS
500GB: Up to 470,000 IOPS
1TB: Up to 480,000 IOPS
RANDOM READ (4KB, QD1)
250GB: Up to 17,000 IOPS
500GB: Up to 17,000 IOPS
1TB: Up to 17,000 IOPS
RANDOM WRITE (4KB, QD1)
250GB: Up to 53,000 IOPS
500GB: Up to 54,000 IOPS
1TB: Up to 54,000 IOPS
Environment
AVERAGE POWER CONSUMPTION
(SYSTEM LEVEL)3)
250GB: Average 3.7 W Maximum 5.6 W (Burst mode)
500GB: Average 4.3 W Maximum 5.9 W (Burst mode)
1TB: Average 4.6 W Maximum 5.3 W (Burst mode)
POWER CONSUMPTION (IDLE)3)
Max. 45 mW
POWER CONSUMPTION (DEVICE SLEEP)
Max. 5 mW
ALLOWABLE VOLTAGE
3.3 V ± 5 % Allowable voltage
RELIABILITY (MTBF)
1.5 Million Hours Reliability
OPERATING TEMPERATURE
0 - 70 ℃
SHOCK
1,500 G & 0.5 ms (Half sine)