Minimizing Drain Induced Barrier Lowering (DIBL) by Reducing Oxide Thickness, Lecture 74

Minimizing DIBL by reducing oxide thickness (or increasing oxide capacitance). I will also describe the use of hafnium oxide (hafnia) to achieve small tunneling-free equivalent oxide thickness (EOT).
Here is the link for my entire course on "Semiconductor Devices for VLSI" that I taught on-line during Fall 2020 • A Course on Semiconduc...
This is Lecture 74 of 77.
Textbook references are to the free e-book "Modern Semiconductor Devices for Integrated Circuits" by Chenming Calvin Hu.
www.chu.berkel...
#DIBL
#DrainInducedBarrierLowering
#HafniumOxide
#Hafnia
#TunnelingLeakageCurrent

[@ArsenedeBienne]

thanks a lot!