Professor, this is really great! I love how you used a datasheet of an actual MOSFET and did the calculations based on that. I didn't watch this just to pass an exam, in fact I'll be designing a commercial product based on this theory. Thank you very much for giving this valuable content for free!
Thank you, Sam, this gave me a better understanding or the relation between snubbers and gate current. For example, in my case current prototype, I use a C3M0015065K, which has a Coss of 300 pF and a Crss of around 31 pF. Those are each dependent on the Vds, but the ration Coss/Crss is around 10 and constant over a very wide voltage range. VT is around 2 - 3 V, and with that, the calculations around 20:00 into the video suggest that then, if we choose Rg 1 ohm or less, the this internal Coss of the MOSFET serves as a snubber for the Turn-Off transition for up to a IL of about 20 A, and we don't need to add any additional capacitance at all ! That's a wonderful relation that I did not know existed. Thank you for explaining the parameters involved in this process in a delightfully clear way.
This was a very interesting and educational video. Running SPICE simulations on some previous applications indicated that while it was possible to increase efficiency (power provided to the load divided by input power) with this snubber design, the optimal capacitance for minimizing dissipation in the MOSFET generally left the peak voltage levels above safe limits that the snubber was being used to enforce. I guess there is no free lunch...
Great lecture, as usual, Prof.!!! @10:33 , shouldn't the gate current be an exponentially decaying current with an initial peak of Vg/Rg since the gate current ig = Vgs/Rg ?
Hi Arun. You have a keen eye. You are the first one to notice my goof. You are correct of course. I must have had the gate voltage i mind. Anyway, this does not harm the explanation since the relevant part is the flat portion. Thank for the comment.
@@sambenyaakov In your analysis, you use a continuous input current with low ripple. Would the analysis change if the input current IL were pulsed? 15:16 Also, why are the capacitors Cgd and Co constant?
@@sambenyaakov The switching transitions in the datasheet are measured with a resistive load and do not fully represent a practical circuit. However, the calculations are made for an inductive load. Therefore, the calculated and measured values will be very different from each other. Am I wrong?
Professor, Excessive capacitance will cause excessive current spikes when the MOSFET is turned on. I usually connect a resistor in series, which can improve the spike problem. Generally, the resistance of this resistor is around 100 ohms.
Sir, I am using a 3 phase contactor to switch a 25kvar capacitor at 440V(33A at 440V), can u suggest the right values of capacitor and resistance that can be used as a snubber to supress arc and protect the contacts of the contactor.
The values depend on stray inductance that you would expect. Energy from inductance moves to cap and builds up its voltage whle the R is chosen to reduce Q to about 1.
Excuse me ,Sir, I have some questions, when the switch turn off the Vgs will drop but in your video you said assume the vgs is constant I think it is weird, can you explain more detail? thanks
Hey sam sir, It is really worth it watching great content and explanation of snubber by you. could you tell me what type of mosfet can we choose from matlab simulation library to design RCD snubber ckt ? I would be thankful if anyone revert on it asap.
This was a great explanation, I do have a few questions? Doesn't this just move the switching losses from turn-off to turn-on? Is the benefit is that the turn on losses are less significant, maybe there isn't a similar constant Vgs area at turn on that generates this problem? Couldn't a similar effect be accomplished with a forward-biased turn off diode in parallel with the turn on gate resistor or a diode and series resistor in parallel with the turn on gate resistor. I've seen this in other circuits and application notes, but am not knowledgeable of all the fundamentals yet and how it compares with this switch technology and application. It would appear this diode only or diode and smaller turn-off resistor would speed up the process of turning off the gate with the inefficiency of pumping energy in and out of another passive device. Could the independent turn-off diode and resistor be better for higher voltage mosfets where the Vt is much greater than the diode forward voltage and for really low voltage mosfets the diode forward voltage is too close to Vt, this parasitic capacitor would be a better choice unless a loss less type is used. Is there a brief explanation of the Vo/Vi limits of the loss-less system for boost circuits? Thanks again for your time :-)
In RCD snubber the losses are moved to resistor, in lossless snubber they are recycled. Pleas break down the ret of comments into sections so I can follow :-)
@@sambenyaakov So, as i understood this, there is a current flowing through transistor, snubber and gate resistor until Vds reaches the clamp voltage. In other words - transistor won't completely turn-off until Vds reaches it's clamp, but we can, sort of, moving losses out of the transistor to the snubber resistor, by increasing part of snubber current? Does this mean that turn-off losses will be more than the turn-on losses? Thank you!
@@sambenyaakov Dear Sam Ben-Yaakov Thank you very much for your excellent videos and lecturers. The are very useful as material resources for students in my work place, Brunel University London.
Professor, this is really great! I love how you used a datasheet of an actual MOSFET and did the calculations based on that. I didn't watch this just to pass an exam, in fact I'll be designing a commercial product based on this theory. Thank you very much for giving this valuable content for free!
Thanks
Sam, your videos are top notch and essential MOSFET material that is rare.
😊Thanks.
As an electronics enthusiast, I really enjoy your videos. Very clear explanations, thanks.
🙏😊
Thank you, Sam, this gave me a better understanding or the relation between snubbers and gate current.
For example, in my case current prototype, I use a C3M0015065K, which has a Coss of 300 pF and a Crss of around 31 pF. Those are each dependent on the Vds, but the ration Coss/Crss is around 10 and constant over a very wide voltage range. VT is around 2 - 3 V, and with that, the calculations around 20:00 into the video suggest that then, if we choose Rg 1 ohm or less, the this internal Coss of the MOSFET serves as a snubber for the Turn-Off transition for up to a IL of about 20 A, and we don't need to add any additional capacitance at all ! That's a wonderful relation that I did not know existed.
Thank you for explaining the parameters involved in this process in a delightfully clear way.
Thanks for comment
Great explanation. I've always wanted to see an algebraic explanation for something I've been using while relying on select on test values
Thanks for coment
very clean and constructive explanation. well done!
Thank you!
very informative and nicely presented. thank you professor👍👍
🙏🙂
This was a very interesting and educational video. Running SPICE simulations on some previous applications indicated that while it was possible to increase efficiency (power provided to the load divided by input power) with this snubber design, the optimal capacitance for minimizing dissipation in the MOSFET generally left the peak voltage levels above safe limits that the snubber was being used to enforce. I guess there is no free lunch...
Indeed
thank you so much for your clear and useful explanation, everiday is a good day for learning!
Thanks
very sharp clear explanations
Thanks.
Outstanding Job. 🙂
Thanks Hamid.
Thank you professor. Great presentation. Can you tell about lossless turn off: how to calculate the Ls inductance and what is best diodes to use?
Thanks. What do you mean by Ls?
@@sambenyaakov At minute 6:12 the inductance of Ls can be calculated?
Equation at 15:30 should read IL+GM*VT instead of IL+VT
Thank you sir you make it's critical clear enough.. straight to the applications. Very nice
😊
Great lecture, as usual, Prof.!!!
@10:33 , shouldn't the gate current be an exponentially decaying current with an initial peak of Vg/Rg since the gate current ig = Vgs/Rg ?
Hi Arun. You have a keen eye. You are the first one to notice my goof. You are correct of course. I must have had the gate voltage i mind. Anyway, this does not harm the explanation since the relevant part is the flat portion. Thank for the comment.
Professor, Can we use this idea in a 3phase inverter - For low and high side?
Yes definitely..
great explanation....but how to know the gate resistor value to calculate snubber capacitance??? is Rg value available in MOSFET Datasheet??
Rg is selected by user. See ruclips.net/video/Aq1Iw6ByXAw/видео.html and other relevant video in my RUclips channel
thanks professor@@sambenyaakov
Dear Sam,
If the IL current is not constant, will there be any change in the analysis?
You mean the current in the main inductor or the parasitic? The snubber is designed to absorb a given energy.
@@sambenyaakov instead of inductor, when resistor is used, is there any change about analysis?
@@fatihe.1338 instead of which inductor? Please indicate minute in video you are referring to.
@@sambenyaakov In your analysis, you use a continuous input current with low ripple. Would the analysis change if the input current IL were pulsed? 15:16 Also, why are the capacitors Cgd and Co constant?
@@sambenyaakov The switching transitions in the datasheet are measured with a resistive load and do not fully represent a practical circuit. However, the calculations are made for an inductive load. Therefore, the calculated and measured values will be very different from each other. Am I wrong?
Professor, Excessive capacitance will cause excessive current spikes when the MOSFET is turned on. I usually connect a resistor in series, which can improve the spike problem. Generally, the resistance of this resistor is around 100 ohms.
Good point. Oscillations will commence if Q is high
I have a supply who has a burned resistor and a 10 nF cap, a idea how to calculate the resistor? THanks./
Is this a snubber resistor?
@@sambenyaakov Yes, but in the meantime I have repair it, just calculate a new one. Thanks for the answer.
So clear and so nice, thank you very much!!
Thanks.
Thank You For your Lectures. Great material.
Tanks for comment.
Interesting analysis. Enjoyed it and now got precise equation to size the cap.
Nice to read.
Can this be used for 3phase H bridge for motor control? Or is there a better circuit?
There are more clever RCD snubbers for half bridge configurations.
@@sambenyaakov if you come across any configuration names, please let me know. Also thanks a billion for these videos.
Sir, I am using a 3 phase contactor to switch a 25kvar capacitor at 440V(33A at 440V), can u suggest the right values of capacitor and resistance that can be used as a snubber to supress arc and protect the contacts of the contactor.
The values depend on stray inductance that you would expect. Energy from inductance moves to cap and builds up its voltage whle the R is chosen to reduce Q to about 1.
Absolutely great video.
🙏👍🙂
Great Video, What was the Vpulse values for simulation?. Regards
To which minute of video are you referring to?
@@sambenyaakov Hi, min 24:10
15V
sir please explain series connection of mosfet for dynamic voltage equlization
Good subject will try/
Excuse me ,Sir, I have some questions, when the switch turn off the Vgs will drop but in your video you said assume the vgs is constant I think it is weird, can you explain more detail? thanks
Which minute in video are you referring to?
@@sambenyaakov 13:24
Hey sam sir, It is really worth it watching great content and explanation of snubber by you. could you tell me what type of mosfet can we choose from matlab simulation library to design RCD snubber ckt ? I would be thankful if anyone revert on it asap.
I am not that familiar with MATLAB MOSFET models. Sorry.
This was a great explanation, I do have a few questions? Doesn't this just move the switching losses from turn-off to turn-on? Is the benefit is that the turn on losses are less significant, maybe there isn't a similar constant Vgs area at turn on that generates this problem? Couldn't a similar effect be accomplished with a forward-biased turn off diode in parallel with the turn on gate resistor or a diode and series resistor in parallel with the turn on gate resistor. I've seen this in other circuits and application notes, but am not knowledgeable of all the fundamentals yet and how it compares with this switch technology and application. It would appear this diode only or diode and smaller turn-off resistor would speed up the process of turning off the gate with the inefficiency of pumping energy in and out of another passive device. Could the independent turn-off diode and resistor be better for higher voltage mosfets where the Vt is much greater than the diode forward voltage and for really low voltage mosfets the diode forward voltage is too close to Vt, this parasitic capacitor would be a better choice unless a loss less type is used. Is there a brief explanation of the Vo/Vi limits of the loss-less system for boost circuits? Thanks again for your time :-)
In RCD snubber the losses are moved to resistor, in lossless snubber they are recycled. Pleas break down the ret of comments into sections so I can follow :-)
Hi.. which snubber circuit is better to use RC snubber or RCD snubber. What's are advantage n disadvantage of both configurations
RC and RCD are for different purposes. RC damps oscillation and RCD controlls dV/dt. See ny video on snubbers.
Hi Professor,
Great video once again. Also what books would you recommend for power electronics design ?
I don't know about design, but a basic power electronics book is: Fundamentals of Power ElectronicsAuthors: Erickson, Robert W., Maksimovic, Dragan
Hi dr Sam. I would know if can we have a choppe, based on thyristors, with 3 levels at the output voltage ?
Really helpful. Thanks for sharing your knowledge!
Thanks for comment.
Great video.
Thanks😊
sir, may u tell me pls, when and where to use CCM and DCM mode of operation in SMPS and which mode is beneficial with which topology.pls guide
Practically any PWM converter will enter DCM at low power. To maintain CCM at low power one would need very large inductance.
where to use DCM and CCM ,is there any trick or voltage by which we could elaborate the reasion.
Thank you professor
😊🙏
Thanks for this explanation.
Perhaps talk about the capacitor technology because a lot of rms and peak current in your application (and 400V)
Good point. Perhaps.
very detail explaination nicely
😊
Why do we ignore Cgs? This capacity should have a contribution to Ig isn't it?
Yes and no. As Vgs reaches the threshold the current through Cgs becomes zero. The total charge takes into count both capacitances.
@@sambenyaakov So, as i understood this, there is a current flowing through transistor, snubber and gate resistor until Vds reaches the clamp voltage. In other words - transistor won't completely turn-off until Vds reaches it's clamp, but we can, sort of, moving losses out of the transistor to the snubber resistor, by increasing part of snubber current? Does this mean that turn-off losses will be more than the turn-on losses? Thank you!
How many times have I flailed my way through an explanation of MOSFET heating? I always seem to start with a story about resistance. I am humbled.
(-:
very nice explanation, thanks!
Thanks
Thank you!
👍😊
@@sambenyaakov Dear Sam Ben-Yaakov Thank you very much for your excellent videos and lecturers. The are very useful as material resources for students in my work place, Brunel University London.
Dear Prof, Please explain once again and perform same analysis for a recycled snubber. Can we skip Ls and D2 ? What are they doing?
Thank you so much Sam !
😊
thank you so much
Thanks
useful video, thanks.
Thanks
interesting 👌👌
Thanks
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