semiconductor device fundamentals #3

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  • Опубликовано: 25 дек 2024

Комментарии • 1

  • @mr.yudawang12
    @mr.yudawang12 9 лет назад

    In the 57:05, I think the diffusion for carrier is hard, because the slope of concentration is decreased. To the contrary, the drift current should be easier since the carrier concentration for both side is larger.