#Mitsubishi

#Mitsubishi, #CM150TL_24NF, #IGBT_Module, #IGBT, CM150TL-24NF Mitsubishi Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
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Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :150A
Collector current Icp 1ms Tc=25°C :300A
Collector power dissipation Pc:890W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C