your channel may not have a large number of viewers right now not but i am sure that in future your channel will be favorite among electronics students. thank you .
Sir i m really thankful to you for making me understand depletion region... Which i really never could undertand. My teacher never gave that. Seriously eduction system in India, as i m from india, shoul be changed .
i m bit confused about the potential barrier curve . why it is so that it is zero in p region and then linearly increases when depletion width starts and then remain constant in n region . please please answer it . because this will solve my problem of read diode characteristics
Sir u said silicon barrier potential is 0.7 at only room temperature because they given in question But we get 0.7 only at Na=10^15 and Nb=10^16 so if we change their concentration at room temperature then we get different barrier potential right?
sir, in this lecture at last part you did explain a numerical in which I am facing a simple problem i.e barrier potential you are getting, is 0.757(VALUE OF SILICON) but when I followed the step above of your it comes 0.329 (VALUE OF GERMENIUM)...PLEASE HELP ME IN IT.
if an immobile ion having electron is combining with hole and forming a positive immobile ion,why again those positive immobile ions on n-side are represented along with electrons(plus sign in a circle with minus sign in its power)?
korukonda meher vihari only the immobile ions of the depletion layer combine with holes, others are prevented from combining with holes because of the barrier potential
Why do say that the barrier potential of si is always 0.75? The ans 0.75 is because of the conc of Na Nd nd ni right? It may not br thr samr in all cases then y do take 0.75 as the barrier potential...sir plz correct me i am confused...
Sir i have a doubt.... I cannot understand how the formation of immobile ion in depletion region and the initially immobile ions present at the p-side or n-side are takes place?
Consider p side of on junction diode. When we add dopant like boron which has 2 8 3 electronic configuration, the valence she'll has 3 electrons. When doped due to an absence of 1 electron they receive an extra electron from Si lattice thus turning into a stable -ve ion and creating hole in the Si lattice.
Boron has 3 electron in outer shell but for bonding it should have 4 electrons in outer shell. So it needs one more electron. Since it is going to accept one electron so it becomes negatively charge
In theraja 's book the calculation of potential barrier is quite different he is using a formula Vb = detltaV+0.7 . And I don't know what to do . Is there any one who can help me out ? :(
your channel may not have a large number of viewers right now not but i am sure that in future your channel will be favorite among electronics students.
thank you .
its already my fav channel ...i learnt digital electronics here itself ;) got A grade in my university xam
Already an Electronic hotspot
I learnt circuit analysis here and had A grade
aww :_)
your guess was correct . now this channel is our prime source to study
Very informative. Concept clearing teacher.. Thankyou sir
Im so grateful to get such an interesting tutorials.
Many thanks to this channel. I learn analog eletronics and hope to expand my career scope.
😂 So it was so easy and my lecturar was blowing our heads in class.. Thanks man,that's very educative.
Watching this during online class
Exactly...👍👍
Same broo
hello and have many thanks for your excellent explanations which is unparalleled in comparison to other electronics tutorials.........
Sir i m really thankful to you for making me understand depletion region... Which i really never could undertand. My teacher never gave that. Seriously eduction system in India, as i m from india, shoul be changed .
WOnderful lectures. Sir, please complete the analog electronics series. It is very helpful
Shambhavi Tripathi .
God save the king!!
Thank you so much sir, may the lord save you ❤️❤️
you explain everything good .. sir vry good work
thanks to neso academy! it saved me
Soo beautifully expalined...❤
bhai idhr se padh rha tubhi
:))
Very simply articulated. Thank you
Sir, please make playlist for python programming .because your videos are very helpful to us.
plss🥺
sir,awesome ur work is
i m bit confused about the potential barrier curve . why it is so that it is zero in p region and then linearly increases when depletion width starts and then remain constant in n region . please please answer it . because this will solve my problem of read diode characteristics
Yeahhhh same doubt
i understood, thanks sir
Sir u said silicon barrier potential is 0.7 at only room temperature because they given in question
But we get 0.7 only at Na=10^15 and Nb=10^16 so if we change their concentration at room temperature then we get different barrier potential right?
sir, in this lecture at last part you did explain a numerical in which I am facing a simple problem i.e barrier potential you are getting, is 0.757(VALUE OF SILICON) but when I followed the step above of your it comes 0.329 (VALUE OF GERMENIUM)...PLEASE HELP ME IN IT.
Got the solution..?
After 5 yrs
whoever got the wrong ans of last question are using log, instead of log use ln,you will get correct one@@vanshtomar6527
@@vanshtomar6527💀😭
But sir by mass action law n(e).n(p)=n(i)^2.,so it will be always ln(1) ,which mean build in potential will be always zero
Not when it is doped.
isnt it that P side should have majority as holes 0:38
what is the effect of concentration of impurity on barrier voltage?
when i try divide this value 10^13/2.25 appear another value it's not same in video
?can any body help me
have u noticed about ln ?????
According to barrier potential, which one is a good semiconductor Ge or Si?
Ge
@@shrithanosmaharaj8679 I am feeling very sorry for your last 3years
@@arkakonar82 what happen bro
if an immobile ion having electron is combining with hole and forming a positive immobile ion,why again those positive immobile ions on n-side are represented along with electrons(plus sign in a circle with minus sign in its power)?
korukonda meher vihari
only the immobile ions of the depletion layer combine with holes, others are prevented from combining with holes because of the barrier potential
Is there another formula for calculating Vbi interms of depletion region?
how to find if intrincsic concentation not given
Soooo goood thanks 👍🏼
Why do say that the barrier potential of si is always 0.75? The ans 0.75 is because of the conc of Na Nd nd ni right? It may not br thr samr in all cases then y do take 0.75 as the barrier potential...sir plz correct me i am confused...
Same doubt
How to use 1.5*10^10
Please tell me answer sir
This Channel is Electronic Hub
Sir i have a doubt....
I cannot understand how the formation of immobile ion in depletion region and the initially immobile ions present at the p-side or n-side are takes place?
Consider p side of on junction diode. When we add dopant like boron which has 2 8 3 electronic configuration, the valence she'll has 3 electrons. When doped due to an absence of 1 electron they receive an extra electron from Si lattice thus turning into a stable -ve ion and creating hole in the Si lattice.
Can you tell me please weather the calculation for this barrier potential is important for my bsc 2nd year course??
please is there any different between Barrier pottential and pottential Barrier ? thank you very much
Why will the graph for potential vary linearly from p side to n side?
Hello Sr
I have a problem about to calculate the potential barrier for Ge at-100 C° at room temperature its value is 0.3 ?
Plz help me to solve this
Please I’ve a question
Why are the ions in the p type semiconductor negative?
Where as the impurity atom used is boron and its negatively charged
Boron has 3 electron in outer shell but for bonding it should have 4 electrons in outer shell. So it needs one more electron. Since it is going to accept one electron so it becomes negatively charge
According to Mass action law ni^2=ne×nh ,so built in potential is always 0.please clear NA,ND,Ne,Nh properly.
Hello
Please what’s the saturation current of a pn junction diode and how is it calculated?
In theraja 's book the calculation of potential barrier is quite different he is using a formula Vb = detltaV+0.7 . And I don't know what to do . Is there any one who can help me out ? :(
can you upload the annotated slides of these lectures in description box?
Thank you a lot sir
Can someone recommend a good question book for electronics.
Robert L Bolsted
good video sir
wrong calculation of log at the end
If ni is not given in the quation but T and Na and Nd is given then how to solve the quation
Derivation will ask in exams or not ?
Sir can you tell me the reference book that u r following:
Why voltage in n type semiconductor is higher than p type
Show how it is working .voltage barrier works
Thanku so much
Nice
i need some proof to potential barrier it self you only write the final relation
Sir my answer is wrong i don't know whyy i tried again and again
My log value is incorrect
My log value is 12.647
Today is my college exam but teacher gave no syllabus no class and no notes ony few hours is left and i have just startes
Konsa chutiya collg.h or pdna ky h pta kse chlga fir
if you see this comment, can you please make a video on derivation of barrier voltage? i have it in my syllabus
Shandar Shandar Shandar
What is immobile ions??
Would plz tell defination?
11:17 question
thq
Sir your work is vry good but because of it's background ,we r unable to see every thing what u r write .
But in our syllabus it is important to derive please do derive this
...
Sir kya pdf mil jayega
Please derive the the formula of barrier potential.
Use Donald Neamen book bro
My room temperature is 40 degree Celsius 🌡️🥵
And my room 2 degree Celsius 😢😢
30 min before exam
peddaga matladandi saar