In 1993 I created a similar hermetic package for power IGBT semiconductors US5347160A. Chip size 1/2 inch square Also for compression power semiconductors in 1989 US5053358.
Very cool demo, what is the main advantage of GaN FETs over MOSFET or IGBTs? Are they specifically for that middle ground between where you would pick one or the other? As an example would these be suitable in high power applications like current regulation in a AC/DC welder without the need for a complex gate driver arrangement?
Thanks @thetooth =) Indeed, they are suitable for high-power converters. A major differentiator is the reverse recovery charge (Qrr), the Qrr of an equivalent, top of the range, Si MOSFET is more than 10x times worse, than that of GaN. Not only Qrr but also most of the parasitic capacitances, that play a role in the switching losses, are multiple times lower in GaN compared to any Silicon device. Resulting in more efficient operation and the enablement of new topologies like the AC/DC bridgeless totem-pole PFC converter. You can find out more on the link here: www.nexperia.com/products/gan-fets/family/CCPAK-GAN-FETS-SMD/#/p=1,s=0,f=,c=,rpp=,fs=0,sc=,so=,es=
Hi @azhuransmx126, thanks for the question. The first device that we released in this package is the GAN039-650NTB: www.nexperia.com/products/gan-fets/650-v-cascode-gan-fets/GAN039-650NTB.html The current rating is 58.5 Amps but it is not limited by the package, it is limited by the RdsON. In the future we will expand our portfolio of RdsONs in this package which will give a range of current capabilities. The package itself can be used with devices capable to deliver in excess of 500 A.
@Nexperia Thanks for the information about your current products, I am particularly studying the use of this Gallium Nitride technology and its great future in the already close humanoid robotics industry such as Teslabot and GaN FET technology since it is undoubtedly the best positioned for that application, since it offers a high power density in a compact space and a much higher efficiency than silicon technology and without being as expensive as the Silicon Carbide technology used in electric cars. It is at an excellent balance point, and in the future, it is expected to offer a good price/power ratio, but only if it can offer to manage 200 to 400A like does the current Si and SiC technologies.
We can agree that a CCPAK of this size would not be very useful. You'll be happy to know that the actual device is 12 mm X 12 mm. The 3d model Chris is using for the video is scaled up quite a bit so you can see all the intricate details.
Hi Chris, very good and interesting presentation, with a very helpful model of the CCPAK1212. Good luck with the new Gan FETs and packages. 👍
Holger
In 1993 I created a similar hermetic package for power IGBT semiconductors US5347160A. Chip size 1/2 inch square Also for compression power semiconductors in 1989 US5053358.
Very cool demo, what is the main advantage of GaN FETs over MOSFET or IGBTs? Are they specifically for that middle ground between where you would pick one or the other? As an example would these be suitable in high power applications like current regulation in a AC/DC welder without the need for a complex gate driver arrangement?
Thanks @thetooth =)
Indeed, they are suitable for high-power converters. A major differentiator is the reverse recovery charge (Qrr), the Qrr of an equivalent, top of the range, Si MOSFET is more than 10x times worse, than that of GaN. Not only Qrr but also most of the parasitic capacitances, that play a role in the switching losses, are multiple times lower in GaN compared to any Silicon device. Resulting in more efficient operation and the enablement of new topologies like the AC/DC bridgeless totem-pole PFC converter. You can find out more on the link here: www.nexperia.com/products/gan-fets/family/CCPAK-GAN-FETS-SMD/#/p=1,s=0,f=,c=,rpp=,fs=0,sc=,so=,es=
650Vds yeap but How much current? 200-300-400A?
Hi @azhuransmx126, thanks for the question. The first device that we released in this package is the GAN039-650NTB: www.nexperia.com/products/gan-fets/650-v-cascode-gan-fets/GAN039-650NTB.html
The current rating is 58.5 Amps but it is not limited by the package, it is limited by the RdsON.
In the future we will expand our portfolio of RdsONs in this package which will give a range of current capabilities.
The package itself can be used with devices capable to deliver in excess of 500 A.
@Nexperia Thanks for the information about your current products, I am particularly studying the use of this Gallium Nitride technology and its great future in the already close humanoid robotics industry such as Teslabot and GaN FET technology since it is undoubtedly the best positioned for that application, since it offers a high power density in a compact space and a much higher efficiency than silicon technology and without being as expensive as the Silicon Carbide technology used in electric cars. It is at an excellent balance point, and in the future, it is expected to offer a good price/power ratio, but only if it can offer to manage 200 to 400A like does the current Si and SiC technologies.
this is ridiculous that's larger than my phone there's no way this will be useful to anybody
We can agree that a CCPAK of this size would not be very useful. You'll be happy to know that the actual device is 12 mm X 12 mm. The 3d model Chris is using for the video is scaled up quite a bit so you can see all the intricate details.