Very informative video indeed. But i want to share some knowledge . Here 'S'-- denotes the subthreshold swing , which is equal to 1/(slope of the graph). If we intend to increase the value slope (in order to make slope more stepper) , we have to decrease the subthreshold swing, S. and the formula which is shown here is of subthreshold swing, S. so shouldn't get confused with slope,s & Swing,S .
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Actually, you are writing the formula for subthreshold swing which is the inverse of subthreshold slope though your explanation is correct but you are using same name for both of them.
subthreshold swing is inversely proportional to the subthreshold slope. Hence for high subthreshold slope, Ioff is low, Ion/Ioff is high. for sts to be high ss should be low i.e. cd should be low. I hope I made it clear to you. Thank You
Hi, Please view the graph in the mathematical perspective. use this relation for clarity.. Low CD--->Low STC--->Steep Curve---->Low Off Current.. I hope this is useful.
S=Vt* ln(10) *(1+ Cox/Cdep) is the subthreshold swing or figure of merit of MOSFET and has a minimum value of 60mv/decade (when Cox/Cdep=0). S is the sensitivity of subthreshold current to the gate to source voltage in the subthreshold region. S=60mv/decade means a decrease of 60mv of gate to source voltage causes 10 times decrease in subthreshold current. But we want the decrease in subthreshold current more rapid that is a decade in subthreshold current should be with a slight decrease in gate to source voltage. So S should be minimum and the inverse of S which is the subthreshold slope should be maximum. S=60 is the minimum value which has been achieved by chip designers uptill now even the latest FinFETs have not achieved value of S below 60mv/decade.
Very good observation. To answer this, you will look at the parameters changing with temp( VTH). Based on temp, the VTH will shift on the x-axis. I will try to explain the temperature dependence soon in a new video
@@vlsiorg I figure out in this way! Subthreshold slope (S) = ln(e)/(Vt*n) so if n =1 then S = q/kT because Vt = kT/q. Therefore, S and T have inverse relation with each other.
We should make the slope stepper means we have to increase the value of S na..??? Why you have consider S should decrease that will get large off current...???
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Very informative video indeed.
But i want to share some knowledge . Here 'S'-- denotes the subthreshold swing , which is equal to 1/(slope of the graph). If we intend to increase the value slope (in order to make slope more stepper) , we have to decrease the subthreshold swing, S. and the formula which is shown here is of subthreshold swing, S.
so shouldn't get confused with slope,s & Swing,S .
exactly
Thanks for the comment! It was confusing when he was explaining
thanks
Sir greatly explained wow just amazed bring more short videos like this sir
Sure I will. Thank you. More more course please visit : www.udemy.com/course/mosfet-foundation-course-for-analog-circuit-design/?referralCode=EF86616891FB10C1A5D1
thank you so much. very nice lecture
Actually, you are writing the formula for subthreshold swing which is the inverse of subthreshold slope though your explanation is correct but you are using same name for both of them.
thank you very much.is a good explanation .you can give any references about what you said.
Hi, you can refer to any detailed lectures on "Nanoelectronics" (NPTEL courses-IISC)
A small doubt, for Ion/Ioff to be high the slope should be high which implies Cd should be high
subthreshold swing is inversely proportional to the subthreshold slope. Hence for high subthreshold slope, Ioff is low, Ion/Ioff is high. for sts to be high ss should be low i.e. cd should be low. I hope I made it clear to you. Thank You
Hi, Please view the graph in the mathematical perspective. use this relation for clarity.. Low CD--->Low STC--->Steep Curve---->Low Off Current.. I hope this is useful.
@@sachindhariwal thank you ❤
Thanks 😊
S=Vt* ln(10) *(1+ Cox/Cdep) is the subthreshold swing or figure of merit of MOSFET and has a minimum value of 60mv/decade (when Cox/Cdep=0). S is the sensitivity of subthreshold current to the gate to source voltage in the subthreshold region. S=60mv/decade means a decrease of 60mv of gate to source voltage causes 10 times decrease in subthreshold current. But we want the decrease in subthreshold current more rapid that is a decade in subthreshold current should be with a slight decrease in gate to source voltage. So S should be minimum and the inverse of S which is the subthreshold slope should be maximum. S=60 is the minimum value which has been achieved by chip designers uptill now even the latest FinFETs have not achieved value of S below 60mv/decade.
thank u sir
Welcome
Hello,
I am wondering how subthreshold slope change with respect to temperature ?
Very good observation. To answer this, you will look at the parameters changing with temp( VTH). Based on temp, the VTH will shift on the x-axis. I will try to explain the temperature dependence soon in a new video
@@vlsiorg
I figure out in this way!
Subthreshold slope (S) = ln(e)/(Vt*n) so if n =1 then S = q/kT because Vt = kT/q. Therefore, S and T have inverse relation with each other.
We should make the slope stepper means we have to increase the value of S na..??? Why you have consider S should decrease that will get large off current...???
Sir , please explain TFET sir.
what exactly do you mean by lower technologies?
does it mean transistors near the lower end of the moore's curve or old generation transistors?
means the reducing the channel length and right now the industries are working on 7nm technology
why subthreshold slope doesn't change? 2:54 min .plz explain to me
Hi, just apply the STC dependency formula. if COX,CD does not changes the STC also does not change.
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