@@quantum_computing May I ask, if I want to simulate the effect of working temperature on device performance, any suggestion as to changes I should make? Adding Temperature =@Temperature@ and hydrodynamic model in physics, foreach temperature in {300, 325, 350} { Temperature = $temperature } in solve section ?
@@SamLin-f6w If you just want to run it at a fixed ambient temperature, you only need to add Temperature = 300 (or 400 etc.) in the physics section. If you want to do self-heating, additionally, you need to add "Temperature" in the coupled equations and add thermode with the ambient temperature. If you also want to turn on hydrodynamic models to solve the non-equilibrum of e/h temperature, then you add hydrodynamic in the physics and eTemperature and hTemperature in the coupled statement. You can also only run hydrodynamic without self-heating. They are not related.
I really enjoyed your TCAD tutorials and gained valuable insights into Senaurus TCAD simulation....... in this video, you mentioned that the sdevice calculates the displacement current in transient simulations. I would appreciate it if you could elaborate on this concept and explain its significance in semiconductors. Additionally, I have observed instances in MOSFET simulations where the gate displacement and drain displacement currents are equal. Could you shed light on the implications of this phenomenon?
@mdyasirbashir4272, thanks for watching. Displacement current is just like the displacement current in a capacitor. It is the current used to charge up the capacitor but does not pass through the capacitor's insulator. It can also be the displacement current that widens or narrows the depletion width (which is a depletion capacitor). Therefore, it only occurs in transient simulation but not quasistationary simulation (as quasistationary simulation means the solution is a steady state (after t = infinity) simulation). When you see the displacement current at the gate and the drain to be the same, it means between the gate and drain, there is an effective capacitor (if the displacement current in other terminals is negligible).
@bvrao3323 Unfortunately, I do not have such videos. If you have model-related questions, I can try to answer them on RUclips comments if time allows. You may also contact Synopsys support to check if they have examples to share. Thanks!
Hello sir, Could you please tell me how to add new materials? For example, I want to create a structure with HZO (Hafnium-Zicronium-Oxide), which is not present in the default library.
You need to define that material in datexcodes.txt and then define its properties in the .par file that you will source in SDevice. You can look at those files in the installation directory as examples.
Good evening sir ,kindly reply for the query am unable to understand to load parameter from command prompt window ,what you are typing to come out and to to type sdevice
Good evening sir video is very helpful thank you so much i have a query in sdevice masterfile command as it is am following you still am getting error as tried to use nonexisting contact source kindly help to resolve
You need to make sure you have defined the contact successfully. The best way to confirm is to use svisual to open the _msh.tdr file. On the top left of the panel, choose lines/particles to see if it is there. Please see this video: ruclips.net/video/twGcJMFN3M0/видео.htmlfeature=shared&t=2956
Good morning sir, thank you for your reply still the same error sir, tried to use non existing contact source! and in n2_local.error unknown error child process exited abnormally gjob exits with status1
@@pavithrabirapaka4166 Btw, it is case sensitive. Do you have the same case? Also, try to locate where the error comes from (look at the log file). If you did define the contact and used the right name, it should not have this error. Thanks!
@@quantum_computing thank you sir it worked ,now am strucked at parameter, while you open terminal window what you are typing to come out and get that -/documents $ in terminal window kindly suggest
Great tutorial on TCAD simulation! I found what I was looking for in the temperature command in the physics section of the video. 58:09
@user-te6tj9bg2r, great!
@@quantum_computing May I ask, if I want to simulate the effect of working temperature on device performance, any suggestion as to changes I should make? Adding Temperature =@Temperature@ and hydrodynamic model in physics, foreach temperature in {300, 325, 350} { Temperature = $temperature } in solve section ?
@@SamLin-f6w If you just want to run it at a fixed ambient temperature, you only need to add Temperature = 300 (or 400 etc.) in the physics section. If you want to do self-heating, additionally, you need to add "Temperature" in the coupled equations and add thermode with the ambient temperature. If you also want to turn on hydrodynamic models to solve the non-equilibrum of e/h temperature, then you add hydrodynamic in the physics and eTemperature and hTemperature in the coupled statement. You can also only run hydrodynamic without self-heating. They are not related.
@@quantum_computingThank you so much! I will try that.
Thanks Hiu Yung (Hugh) Wong .. shared this beautiful presentation ...explained very well... would like to see some videos on DRAM , if possible ?
@jagatpatiraiguru9806 I do not have videos on DRAM now. I will upload if I have in the future.
@@quantum_computing thank you Yung . 😊
I really enjoyed your TCAD tutorials and gained valuable insights into
Senaurus TCAD simulation....... in this video, you mentioned that the sdevice calculates the displacement
current in transient simulations. I would appreciate it if you could
elaborate on this concept and explain its significance in semiconductors.
Additionally, I have observed instances in MOSFET simulations where the
gate displacement and drain displacement currents are equal. Could you
shed light on the implications of this phenomenon?
@mdyasirbashir4272, thanks for watching. Displacement current is just like the displacement current in a capacitor. It is the current used to charge up the capacitor but does not pass through the capacitor's insulator. It can also be the displacement current that widens or narrows the depletion width (which is a depletion capacitor). Therefore, it only occurs in transient simulation but not quasistationary simulation (as quasistationary simulation means the solution is a steady state (after t = infinity) simulation). When you see the displacement current at the gate and the drain to be the same, it means between the gate and drain, there is an effective capacitor (if the displacement current in other terminals is negligible).
@@quantum_computing thanks I got it
thanks sir for sharing such videos on RUclips platform .. If possible upload a complete simulation flow of TFET device with BTBT model example
@bvrao3323 Unfortunately, I do not have such videos. If you have model-related questions, I can try to answer them on RUclips comments if time allows. You may also contact Synopsys support to check if they have examples to share. Thanks!
Hello sir,
Could you please tell me how to add new materials? For example, I want to create a structure with HZO (Hafnium-Zicronium-Oxide), which is not present in the default library.
You need to define that material in datexcodes.txt and then define its properties in the .par file that you will source in SDevice. You can look at those files in the installation directory as examples.
@@quantum_computing Thank you, sir. Probably, beginners are stuck with this problem the most. It would be very helpful if you make a video on this.
Good evening sir ,kindly reply for the query am unable to understand to load parameter from command prompt window ,what you are typing to come out and to to type sdevice
Please let me know which part of the video you are referring to. Thanks!
@@quantum_computing sir, 1:13:11(time) in 4th video of sentaurus hands on tutorial sir
@@BPavithara-r4s When you type "sdevice -r -P:Silicon", it will save the parameters of Silicon in a file called "models.par".
@@quantum_computing Thank you sir but before typing sdevice-r-P:Silicon" sir what you are typing to get exit1 swb in command window
@@BPavithara-r4s You can click Extension... => Command Prompt here. Or just open a terminal to do so.
Good evening sir
video is very helpful thank you so much
i have a query in sdevice masterfile command as it is am following you still am getting error as
tried to use nonexisting contact source
kindly help to resolve
You need to make sure you have defined the contact successfully. The best way to confirm is to use svisual to open the _msh.tdr file. On the top left of the panel, choose lines/particles to see if it is there. Please see this video: ruclips.net/video/twGcJMFN3M0/видео.htmlfeature=shared&t=2956
Good morning sir, thank you for your reply still the same error sir, tried to use non existing contact source! and in n2_local.error unknown error child process exited abnormally gjob exits with status1
@@pavithrabirapaka4166 Btw, it is case sensitive. Do you have the same case? Also, try to locate where the error comes from (look at the log file). If you did define the contact and used the right name, it should not have this error. Thanks!
@@quantum_computing
thank you sir it worked ,now am strucked at parameter, while you open terminal window what you are typing to come out and get that -/documents $ in terminal window kindly suggest