Silvaco TCAD Simulation of CMOS Inverters || 45 nm and 1 μm CMOS Technology Simulation 🔬🖥️🔋💡
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- Опубликовано: 10 сен 2024
- Welcome to our 🔬 in-depth tutorial on TCAD simulation using Silvaco, where we explore the cutting-edge realm of CMOS inverters at 45 nm and 1μm scales. In this video, we'll take a deep dive into the intricacies of semiconductor device simulation, a topic of paramount importance to tech giants like Intel, AMD, and TSMC as they push the boundaries of chip design and fabrication. 🌟
Using Silvaco TCAD, we'll unravel the complexities of these advanced technology nodes, examining how CMOS inverters perform under varying conditions critical to optimizing circuit performance and power efficiency. Whether you're an aspiring engineer looking to master semiconductor physics or a seasoned professional in semiconductor design, this tutorial offers invaluable insights into the simulation process using industry-leading tools. 🖥️💡
Join us as we explore the world of CMOS inverters, leveraging Silvaco TCAD to simulate, analyze, and gain a deeper understanding of their behavior in real-world applications. Get ready to embark on a journey where theory meets practice in the realm of semiconductor technology, shaping the future of computing and electronic devices. 🚀
Really useful work for Tech companies. You should try to join one.
Thanks. I'd love to consider one.
Wow
Colorado
Amazing technology work.
Thanks!
Thanks Sir ji ❤❤❤
So nice of you
very nice insight, sir how see effect of MOSFET width variations.
By default, the width in Silvaco TCAD is set to 1 um. We can change it. It will affect the switching characteristics, delay and power dissipation of the MOSFETs.
MOSFET width variation has several effects on the device's characteristics:
1. *Current handling capability*: A wider MOSFET can handle more current, as the channel resistance decreases with increasing width.
2. *Resistance*: The on-resistance (RDS(on)) decreases as the MOSFET width increases, reducing voltage drop and power loss.
3. *Gate capacitance*: The gate-source and gate-drain capacitances increase with wider MOSFETs, potentially reducing switching speeds.
4. *Threshold voltage*: The threshold voltage (Vth) may decrease with increasing width due to reduced channel length modulation.
5. *Transconductance*: The transconductance (gm) increases with wider MOSFETs, enhancing current driving capability.
6. *Power dissipation*: Wider MOSFETs can dissipate more power, but may also generate more heat.
7. *Matching and variability*: Width variation can affect device matching and introduce variability in circuit performance.
8. *Layout area*: Increasing MOSFET width occupies more layout area, potentially impacting circuit density.
By understanding these effects, designers can optimize MOSFET width for specific applications, balancing performance, power, and area considerations.
@@HabibAhmadGatech sir how we can change MOSFET width from 1um in silvaco settings please make a vedio on it
Sir in your vedio you have considered 1um thickness and 45nm channel length, but how we can se the variation of MOSFET width. Please help sir
Hello, could you please provide guidance or examples of simulations related to gas sensors or biosensors using Silvaco? I’ve been struggling to find any resources and have been working on this for months without success.
Responded
sir can u show us the simulations in silvaco related to gas sensors or biosensors as there is no resource present
i have been trying to simulate for months now but cannot find a solution.
Responded
thank you sir. Can you teach how to write the loop in TCAD pls ? when i increase the thickness from 10nm to 100nm i have to edit x.max. It waste so many time. Thank you
Good evening sir
Thank you for your videos. Sir I have a doubt in GaN HEMT. What are the techniques to boost transconductance?
To improve the transconductance (gm) of a High Electron Mobility Transistor (HEMT), consider the following strategies:
1. *Optimize gate length and width*: Reduce gate length (Lg) and increase gate width (Wg) to increase gm.
2. *Increase carrier density*: Higher carrier density (e.g., by increasing doping or using a higher mobility material) leads to higher gm.
3. *Improve gate-channel capacitance*: Increase the gate-channel capacitance (Cgc) by optimizing the gate insulator and channel thickness.
4. *Reduce source and drain resistance*: Lower source and drain resistance (Rs and Rd) results in higher gm.
5. *Use a higher mobility material*: Choose a material with higher electron mobility (e.g., InGaAs or GaN) for the channel.
6. *Optimize the gate metal*: Select a gate metal with low resistance and high work function.
7. *Use a recessed gate*: A recessed gate can increase gm by reducing the distance between the gate and channel.
8. *Implement a delta-doping layer*: Adding a delta-doping layer can increase carrier density and gm.
9. *Use a strained channel*: Introduce strain in the channel to enhance carrier mobility and gm.
10. *Optimize the device design and processing*: Use simulations and experiments to optimize the device design and fabrication process.
Remember, the best approach depends on your specific HEMT design and application.
Thank you sir
@@mounikag8136You are welcome!