Want to point out that when you talked about slope of the graph as the resistance, this is an I-V graph so the slope will give conductance and not resistance. Hence Vgs2 will have lesser slope and lesser conductance and its inverse will be more resistance.
Thank you very much for your videos. Thank you, very much for your videos. You already kno. You explain it very well. I'm so happy I found your channel!
Because Vgs is kept constant...it's only the Vds which is changed from time to time. So, since the gate to source voltage is kept constant, the channel width near source remains constant.
There would be no n-channel in the absence of V-gs. Even if you apply V-ds, electrons(e-) from from source won't be able to migrate to drain. Instead due to p-type substrate in between, electron hole recombination would take place & no drain current. Then as you progressively increase gate voltage Vgs, n-channel would start building up. Vt is that gate voltage Vgs at which e- start to move from source to drain. No e- hole recombination takes place because p-type substrate in the path has been inverted to n-channel. Finally width of n-channel will depend upon the portion of applied gate voltage over & above the threshold voltage. Veff = Vgs(applied) - VT
what if vgs is 4v and vt is 1v then the veff can overcome the opposite voltage at drain and the current is not constant then the graph cant be rhat u've drawn
When Vgs = Vt i.e. 1 volt, n-channel would be formed and drain current would start. As Vgs is increased further from Vt, the width of n-channel keeps on increasing. Which means there would be a much wider conduction channel(n-channel) between source & drain at 4V as compared to at 1V. Hence for same Vds, drain current would be much higher for Vgs = 4V than at 1V.
It is the difference between gate to source voltage and threshold voltage.If it is greater than the drain to source voltage VDS for n channel enhancement type MOSFET then only the current will flow
Yeah, at first I was like "OK I got it proceed" but when I was losing focus or couldn't get his point, his drawback started to sound like a reinforcement rather than a drawback really.
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1st*
@@alishshrestha5422 :)
My 1st
what are you doin my bro after all these years? lol@@alterguy4327
Want to point out that when you talked about slope of the graph as the resistance, this is an I-V graph so the slope will give conductance and not resistance. Hence Vgs2 will have lesser slope and lesser conductance and its inverse will be more resistance.
One of the best educational channels, a tiny mistake in the conductivity symbol at 10:37
You are an excellent tutor
Mr. Neso academy...
Thank you very much for your videos. Thank you, very much for your videos. You already kno. You explain it very well. I'm so happy I found your channel!
VERY DETAILED BUT LENGTHYYYYYYYYYYYYYYY
Very well explained. Thank you !
the best teaching lectures.
Thank you sir
Great work...keep it up sir...
Conductivity is "Sigma" Not Rho
Yea, I recognize rho as charge density.
Yea, I know rho as charge density.
In the graph I think there wontbe current@4:48 till Vds
This playlist is pretty amazing.... only if it was updated too... sadly it's not
not yet
Excellent
I want lectures on IGBT
1st doubt: how Vds= Vgs- Vt
2nd doubt: If (Vds)sat= Vgs1 - Vt then Veffective= (Vds)sat?
Thanks a lot sir
Due to .. subtitles....the explanation..written at the bottom is not appearing
Then disable subtitle .
Your lecture is amazing ! Thank you . It is so much clearer than my exchange University :)
Sorry, there is any video like this about p-channel E-MOSFET? I really need that, please repond me, thank you very much
What happen to the length of channel and depletion region in case 2 and case 3?
what is the need of Id=k(vgs-vt)^2 ?? i mean where did this relation come from and what is the need of that ? as vgs2
What happens if pmos is replaced by nmos and vice versa in CMOS
as Vgs increases Id should increase. the graph for vgs2 should be above Vgs1.
watch carefully, in there vgs2 is less than vgs1.. so id for the vg1 will be higher than the vgs2 as shown in the fig. isnt it?
Which voltage will decide that there will be channel formation or not on side of drain (either Vgd or Vds)
I/p voltage i.e. Vgs will decide this.
The sign of conductivity has been confused with resistivity.
I know rho as charge density.
Sigma is resistivity and rho is conductivity.
Sir, which book you follow?
Maza aa gaya
Sir why is the channel width uniform and not increasing with potential in source to gate region.
Because Vgs is kept constant...it's only the Vds which is changed from time to time. So, since the gate to source voltage is kept constant, the channel width near source remains constant.
what will happen if vgd=0
How these equations formed?
Bro, Vgs1,Vgs2 kya hai???
Question, what is the difference between triode and ohmic region?
They are the same. They call it ohmic as it acts as a variable resistor in that region, not sure about the origins of triode tho.
@@bboygmoney Triode is the old vacuum valves. I don't know if there's any connection to it!
Sir can u give me msc physics electronic devices and circuits notes pls
what is " w and l" here??
VT kaha se aaya
There would be no n-channel in the absence of V-gs. Even if you apply V-ds, electrons(e-) from from source won't be able to migrate to drain. Instead due to p-type substrate in between, electron hole recombination would take place & no drain current.
Then as you progressively increase gate voltage Vgs, n-channel would start building up.
Vt is that gate voltage Vgs at which e- start to move from source to drain. No e- hole recombination takes place because p-type substrate in the path has been inverted to n-channel.
Finally width of n-channel will depend upon the portion of applied gate voltage over & above the threshold voltage.
Veff = Vgs(applied) - VT
what if vgs is 4v and vt is 1v
then the veff can overcome the opposite voltage at drain
and the current is not constant
then the graph cant be rhat u've
drawn
sir please reply to my comment
i can't understand
When Vgs = Vt i.e. 1 volt, n-channel would be formed and drain current would start.
As Vgs is increased further from Vt, the width of n-channel keeps on increasing. Which means there would be a much wider conduction channel(n-channel) between source & drain at 4V as compared to at 1V.
Hence for same Vds, drain current would be much higher for Vgs = 4V than at 1V.
why it is called triode region?
why not? :)
Linear region
❤
7:33 enlight me for Vgs = Vgs - Vgs - Vt = Vt?
shouldn't it Vgs = 0 - Vt = -Vt ?
after 1 min trying to solve.
turns out
Vgd = Vds + Vt - Vds = Vt
i didnt understood how that equation has come
@@manmitharao1724 The appliance of science. 😳
What is exact meaning vgs-vt any one can tell
It is the difference between gate to source voltage and threshold voltage.If it is greater than the drain to source voltage VDS for n channel enhancement type MOSFET then only the current will flow
Sir what is w/l ratio
K is proportional to W/L and the constants are u*cox*0.5
brain buster
Thoda choti video banaya karo
the only drawback in this video is that whosoever is giving the lecture loves repeating the same thing all over again and again..:)
Yeah, at first I was like "OK I got it proceed" but when I was losing focus or couldn't get his point, his drawback started to sound like a reinforcement rather than a drawback really.
yes...repeating the same points is like a cherry over the cake...
Easy to criticize.Easy to show off by sounding brilliant.
terrible explanation
What happens if nmos and pmos are interchanged in cmos