I know it's been 3 years but I'm commenting just in case The 1st equation applies for Triode/Ohmic region The 2nd equation applies for Saturation region
just one question. the arrow of the MOSFET is to the right, its mean its PMOS right, according to cheat sheet from Dr.Zahi haddad, its written PMOS assume saturation condition Vds < Vgs - Vt , then why he's using NMOS condition assume saturation ? who can answer this
The first example: Isn't that the symbol of a P-MOS transistor? I mean the direction of the arrow pionts outside. So why should we solve the problem based on N-MOS operating condition?
Answer pls Assuming a linear fall of voltage in a transistor at turn on, falling from V to zero in actime t2 , derive an expression for the snubber inductance L which will delay the rise of current to its on state value of I in a time of t1. Derive expressions for the switching energy loss and the inductor energy , in terms of V,I,t1 and t2 and show that the overall loss will be a minimum when t1=(2/3)t2
Why is + vgs +1,2kId - 5 = 0 and not vgs -1,2kId - 5= 0? If you can explain I would be grateful. Do you have any class that explains this? if you can send the link
First he multiplied 0.4 with the () inside. On the left side it was 1 Id. So when he multiply 0.4 times -7.2 you get -2.88 Id. After that he took that 1 Id and move it to the right side which makes left side 0 and right side -2.88 - 1 which makes -3.88 Id. He solved two steps in one but if you first multiply 0.4 with () and then move Id from left to right you will get the same answer as his. Hope it makes sense to you.
You have made 1 mistake in the question Vgs < Vth as this is a p-mos so the current was actually the first current but the answer is still correct. Id = 5.63 mA
Tomorrow my exam pls help a power mosfet with a breakdown rating BVDSS =800V MUST COnduct 10 A when on with a maximum on state voltage VDs =4v if the current density in the mosfet limit to 200A/cm2, estimate the conducting area which is required
The audio in this video is in the cutoff mode
xd
lol
Lmao
bruh
1 year later, still an epic RIP
One and only person to show students on how to solve the equation. Thank You So Much, helpde so much for exam preparation.
thank you for this... beautiful... clear voice without crazy accent, beautiful penmanship, clear explanation... 100/100 ;-)
Thank you very much. My teacher has no wiling to teach concepts he is just reading slides. Thanks to your videos, I can be able to complete my course.
Same 😟😰
same :(
yep
everyone have the same teacher? lol
damn are we from the same school 😂
@@artichilli which school are you from, I am from Istanbul Technical University
Thank you; The examples you do bring all concepts together again and help with review
You just saved my semester. Thank you ,
Thank you Sir. You helped me understand how to solve a MOSFET.
I have a question for 16:38
Shouldn't the battery you design at that moment be upside down?
You are a gentle explainer.
wallah king
Dude has some fancy gadgets🤯
id = 0,5K(vgs-vth)^2 why do you use id = K(vgs-vth)^2 whitout the 0,5?
I know it's been 3 years but I'm commenting just in case
The 1st equation applies for Triode/Ohmic region
The 2nd equation applies for Saturation region
just one question. the arrow of the MOSFET is to the right, its mean its PMOS right, according to cheat sheet from Dr.Zahi haddad, its written PMOS assume saturation condition Vds < Vgs - Vt , then why he's using NMOS condition assume saturation ?
who can answer this
no the circuit is in NMOS condition
Thanks, your way of teaching is very good
Thank you sir it was so helpful.
so far this the BEST lecture i've come across online.. love from india❤❤ thanks a lot sir!!
Isn't the formula for Id should be Id=Kn/2[Vgs-Vth]^2? For saturation region
Exactly!
@Kenneth Presto I was gonna say the same thing
This is E MOSFET, if you check FE handbook you will see Id=K[Vgs-Vth]^2
Thanks it is very helpful for me
Keep it up
The first example: Isn't that the symbol of a P-MOS transistor? I mean the direction of the arrow pionts outside. So why should we solve the problem based on N-MOS operating condition?
Zahi Haddad shines as usual!
hello, could you please provide us with the table you use for conditions?
No, it's coming through but it's distorted. Saturation mode. ;)
you have solve that assuming the mosfet is n channel but in your paper the arrow says that is the p channel
Very Beautiful Explanation Sir. Thank You So Very Much Sir.
Please tell me, can the cheat-sheet be accessed in some way? Thank you.
Dont stop dis video sir
there is red liquid flowing out of my ears, is this because of the beauty of this video?
thanks so much 👍
very good
Answer pls
Assuming a linear fall of voltage in a transistor at turn on, falling from V to zero in actime t2 , derive an expression for the snubber inductance L which will delay the rise of current to its on state value of I in a time of t1. Derive expressions for the switching energy loss and the inductor energy , in terms of V,I,t1 and t2 and show that the overall loss will be a minimum when t1=(2/3)t2
Lol, the rudeness of some people
hai sir i just want to double confirm u get Id in mA and why did u just calculate the Vgs=5-1.2Id with including mA in the equation
How do you find this K value?
great video, thank you
Thanks
Isn't the formula for saturation: Id = K/2(Vgs - Vth)^2 ?????
he uses that
Why is + vgs +1,2kId - 5 = 0 and not vgs -1,2kId - 5= 0? If you can explain I would be grateful. Do you have any class that explains this? if you can send the link
Thank you Sir
What if vt is not given please tell how can i solve that?
why 1.2k id? shouldnt it be 1.2k is? why id?
thanks
Because he was doing KVL. All the voltages added together would be zero. 1.2 Id is the voltage across that resistor.
Thank you
Thankyou...
Excuse me sir it's supposedly 1200Id, I'm confused now
👍👍👍❤️
Make more video in electronic
THANK YOUU
I think the drop in the voltage should be - ??!
thank you
why can’t my professors teach like this
Why we use R in the drain
I think is a pull up resistor.
why did he make the id on the left side 0?
First he multiplied 0.4 with the () inside. On the left side it was 1 Id. So when he multiply 0.4 times -7.2 you get -2.88 Id. After that he took that 1 Id and move it to the right side which makes left side 0 and right side -2.88 - 1 which makes -3.88 Id.
He solved two steps in one but if you first multiply 0.4 with () and then move Id from left to right you will get the same answer as his. Hope it makes sense to you.
You have made 1 mistake in the question
Vgs < Vth as this is a p-mos so the current was actually the first current but the answer is still correct. Id = 5.63 mA
I did not know MOSFETs when the base terminal not used the arrow will change the opposite now I know.
@@noobstracker4029 wut??
Tomorrow my exam pls help
a power mosfet with a breakdown rating BVDSS =800V MUST COnduct 10 A when on with a maximum on state voltage VDs =4v if the current density in the mosfet limit to 200A/cm2, estimate the conducting area which is required
Good video, but all those calculator things was wasted time.
maybe u can solve mosfets, but u cant solve your audio clipping....
Distorted audio spoils this video
better than nothing 🤷
You need a capacitor to filter the noise.
@@diy-projects This video is a treasure.
It is horrible how you mess with Units.... if I_D is in mA, then keep R in kOhm... also, Ohm is the unit of Resistance, not k.