Lecture 2 - IC and ESD

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  • Опубликовано: 24 дек 2024

Комментарии •

  • @christopherlooby8856
    @christopherlooby8856 9 месяцев назад +1

    Good to see practical aspects like active parasitic devices being included in the EE curriculum.

    • @christopherlooby8856
      @christopherlooby8856 9 месяцев назад

      Just to add, the Grounded Gate NMOS clamp for the positive zap can also act as the negative clamp because its body diode clamps the negative zap. Of course you need to have the correct dimensions and layout of guardrings/salicide-block to avoid latchup and withstand 1-4kV HBM but you'd have to do that with an explicit diode too.

  • @thatguy6442
    @thatguy6442 9 месяцев назад

    16:11 ESD