I think main change is oxide thickness below the gate changes for lvt, svt & hvt, doping concentration also helps little bit, because threshold voltage VT is a function of --> (oxide thickness tox, source to bulk voltage Vsb, Doping concentration Na or Nd).
Awesome content. Clear and concentrate. Thank you sir.
I think main change is oxide thickness below the gate changes for lvt, svt & hvt, doping concentration also helps little bit, because threshold voltage VT is a function of --> (oxide thickness tox, source to bulk voltage Vsb, Doping concentration Na or Nd).
super mama
Sir how we can find synchronous and asynchronous paths in the design
thank you sir, lecture is useful
hi sir, can you please explain relation between doping and VT and leakage current.
Hi sir, I have a question about which doping are you referring to, the substrate doping or the drain/source doping?
hello sir
please explain about corners, modes in vlsi
Tnq sir please update it as much as possible
How to identify which cells are lvt / htv from library ? How to guide tool to use lvt cell instead of hvt ? Thanks in advance
Thank you
Why the size is not change while swapping the vt's
VT swap only means cell will be faster by changing threshold voltage, it doesn't change capacitance of cells.
All the cells are equal size