[Electronics] 3D structural analysis of a 128-layer 3D NAND flash memory

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  • Опубликовано: 24 сен 2024
  • 470 serial cross-sectional SEM images of a 128-layer 3D NAND flash memory were acquired on an orthogonally arranged FIB-SEM in 16 hours. The BSE images were taken at 1 kV accelerating voltage to obtain compositional contrast with minimum depth information. Reconstructed 3D data set allows extraction of arbitrary slice planes and subsequent geometrical & dimensional evaluation of channel holes.
    #3DNAND #FlashMemory #128Layer #FIB #SEM #FIBSEM #electronmicroscopy #ElectronMicroscope
    Available instruments for this measurement are :
    Orthogonally arranged FIB-SEM
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