Samsung Foundry’s New Transistor Structure: MBCFET™
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- Опубликовано: 7 фев 2025
- Samsung’s patented version of Gate-All-Around, MBCFET™ (Multi-Bridge-Channel FET), uses a nanosheet architecture, which enables greater current per stack. Compared to 7nm technology, Samsung’s 3GAE process with MBCFET is designed to provide up to a 45 percent reduction in chip area with 50 percent lower power consumption or 35 percent higher performance. This initial GAA-based process node is expected to be widely adopted in next-generation applications, such as mobile, network, automotive, Artificial Intelligence (AI) and IoT.
There are a small number of super smart people, and all of us benefit from their work. Big thanks to you smart guys. I'm so dumb I don't even understand the video.
Simply speaking: MOSFETs, a type of transistor, has 3 (technically 4, but we ignore one) connections. There is a source and a drain, normally they are connected in a way that currents want to flow through it. The gate voltage controls if electrons or holes (current) can flow from the source to the drain or not. Transistors can be combine in a way they can be useto do mathematical operations, this is how every computer works.
The violet part you see in the video shows the gate, the grew part is the channel between source and gate.
This transistors have a size of a few nm.
@@happygimp0 "Simply speaking", I don't think the average joe would understand that tbh...
@@_Chad_ThunderCock Why, this isn't hard.
I guess this is the Dunning-Kruger effect, from my perspective i made it very simple.
@@happygimp0 What is the maximum frequency that a transistor can theoretically reach?
never before have i been so excited for something i have no idea about
Samsung's 3-nano is developed with a different technology from tsms' 3-nano.
Samsung is also confident that it will be far better than TSMC from 3nm and onwards...
I will keep this video in mind for when I build a fabrication facility
Pick
Good luck
OMG i was right, this video Coreteks used in his background footage does go past finfet. This will be huge, a 3D stacked transistor, if it reaches viable costs in actual consumer HW.
humanity: the need for speed
This is separate from 3D stacked transistors. 3D stacked gaa is around 7 years away so we need gaa first.
I never miss Samsung semi conductor videos, especially when the title is a BREAKTHROUGH in technology , let's gooooooooooo 😍😍😍😍😍😍❤😘😘😘😘😘😘
Breakthrough, but every semi company and their moms are doing it.
Sniff me off
Chill everyone
@@omarsabih it's a breakthrough, you must give credit to where it belongs
Tch, Breakthrough my a**.
I don't have any Faith in Samsung now. because of how they Fabricated Snapdragon 8 gen 1. sheesh
It's the worst chip I've ever seen, when it comes to power Efficiency.
진짜 너무 멋지고 자랑스럽다. 올해 하반기 삼상전자 무조건 들어간다!! 삼성화이팅
great illustration, Thanks
This looks very similar to Intel RibbonFET. Different names for the same idea?
Samsung announce it 3 years ago, and intel about 1 year ago, so not sure which inspires which.
yes same idea
Both MBCFET and RibbonFET are variants of GAAFET with slight tinkering.
Yah, Almost Same
@@thatsawesome2060 i see
Except Samsung is generally behind TSMC and at a similar pace to Intel if not slower when it comes with semiconductor innovation and performance characteristics across the same generation vs the competition. The MBCFETs might change this tho, we shall see whether TSMCs enhanced FinFET, Intels GAAFET or Samsungs MBCFET will come out on top in the 3nm process node generation
So exciting and now I can't sleep 😁😁😁😁
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I was dumb forgot the login password. I would appreciate any assistance you can give me
@Jorge Mateo instablaster ;)
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@Jorge Mateo Glad I could help :)
Lets hope for the best. Although we are working on 3nm process
Good video. Intel has since released its Super FinFet transistor design a few months back.
technology has always been there. The thing is about how to realize the structure through the fab with excellent manufacturability.
one thing that slows down technology thats already here is money and resources.
I've read many stupid comments on RUclips, but this one takes the crown.
@@sebastianelytron8450
In what way exactly...?
1:23 It looks like the same thing, only Finfets are lying down, and mbcfets are standing up.
Is this similar to RibbonFET?
OMG, how did u do that animation?! It's awesome!!
So, thsi is the same idea as IBM's nano sheet.
looks alot like intel ribbon fet but this was released 3 years earlier
Congrats Samsung!
GAA-Revolutionary CMOS
Like RibbonFET
GAA in tsmc is equaivalent ==== to the MBCFET in Samsung
Quantos watts de portadora ele dá em AM?
Everything they mentioned in the video GAAFet can do to They didn't explain how they do it easier than GAAFet thay just compared it to FinFet.
This is the point of marketing. Sell you something standard and convince you to overpay for it.
from the obscurity of this video, MBCFet looks like GAAFet with wider bridges and vertical version of FinFet
@@user-pl7tf9gv8e Those 2 things you mentioned are features of GAAFet
@@cablefeed3738 both are basically the same except nanowires vs nanosheets afaik.
If Apple's A17 have 82 photomask layers based on FinFET I wonder how many additional photomasks are required for MBCFET-based A17! It could easily pass 140.
So what is the difference between this MBCFET and RibbonFET??? Both are GAAs, are there any differences?
when do we get gaafet transistors, its been 2 years since the launch of this video and we still dont have them.
They announced nano3 gaa feasiblrle which makes at least 6months faster than T and will start producing using gaa in q1 of 2022
But I think some angular shape (mod mbcfet) will be more feasible in the perspective of transistor technology.
Pretty pictures.
Isn't this the same as IBS's GAAFET?
And now vertical gaa fet comes in
How is this different from Ribbon Fet introduced by Intel
wow, wondering new technology~!
Excellent introduction of such advance technologies. Very informative to help students for my lectures.
very nice
isnt ribbonFET the same as this? intel is slacking behind.
Isn't the animation show flow in the wrong direction???
It depends from which are the source and drain. But for sure it's in the fin, so it's right.
Multi bridge channel Fets
We cant be simple even perSize
OOOOOOOOOOOOOOOOOOOOOOOOOOOooooooooooooooooooooooooooooooooooooooooooooo
Meanwhile TSMC: FinFETs for 3nm!!
I believe it is GAA.
@@hariranormal5584 no.
it seems TSMC 20nm's nightmare comeback
The video's cool as hell and I finally understood how these work
I thought electricity went left to right ¯\_(ツ)_/¯
These are transistors, hard to explain here but you can basically see how chips work in general and can understand
The current passing through the nano sheet is the current use to read the bit, I.e. a 1 or 0. The gate or switch surrounds the nano sheets. A current is applied to the gate which applies a small electric field to the nano sheet which allows the current to run through the nano sheet and be read as a 1. If a current is not applied to the gate then the transistor or bit will be read as a 0. This is how it works in its simplistic form. This is good enough to understand the concept, I think.
So nothing new but faster? looking for something smaller.
nice
So you took a nanowire, and made it wider...? Okay. Is this even even be patentable? You took something that didn't definite it's dimensions, then you defined dimensions.
I know right!? I bet they just wanted to make a cool video about it this new process technology.
I found this a good article on the matter: spectrum.ieee.org/semiconductors/devices/the-nanosheet-transistor-is-the-next-and-maybe-last-step-in-moores-law
I think after reading this you will be somewhat more reluctant to call this boring or uninnovative.
(sarcasm ^)
Just by changing the Orientation of the components, that much build up is not necessary.
By the way the latest Exynos chip is still not being seen put to use.
Why the un-necessary hype then?
Oo
A.G.I Will be man's last invention
이번. 2분기양산 들어간다고얘기 얘기 들었습니다 하지만패키징 투자 도 신경많이쓰기 부탁합니다. I Love Samsung. 💪. 👍
Exciting, sure. But no where near what graphene is going to be capable of.
Intel ki band bjaa denge
Apple just crushes them with 5nm cpu which is more powerful then a full fledged desktop
Hmmm sir, Apple cant make chipset. Maybe design or architecture. When it comes to under nano7 technology, only 2companies are capable; SS and TSMC🤣
Sign me up ill take 50!! 💰💰💰
But Samsung doing it ? Nah. Nevermind cuz Samsung is so bad at Chip Fabrication. sheesh