Thank you very much Dr. Hadeed. I have a doubt about the shunt loss: in the "Shunt PV model" section I have understood that to keep these losses below 1% the Rp should be greater than one thousand times Voc/Isc. Shouldn't it be only one hundred times, instead? Best regards
The difference comes in with the properties of the PV module. For example, in a 1 D model a diode is used to develop the understanding of the PN junction, while in 2 D model, the junction recombination effects are also included. In general, more the number of diodes, more complex and accurate the model is. However, it should be kept in mind that very detailed models are often not required at a system level and a good compromise between accuracy and convergence speed is desired.
Thank you very much Sir. Your explanation cleared many of my doubts. Respect from India🙏
Thank you very much Dr.! I was looking for this explanation during the last year and just found it here! Thanks a lot and I hope you the best!
Thank you very much Dr. Hadeed.
I have a doubt about the shunt loss: in the "Shunt PV model" section I have understood that to keep these losses below 1% the Rp should be greater than one thousand times Voc/Isc. Shouldn't it be only one hundred times, instead?
Best regards
Yes thanks for the correction. It is 100 times.
Aoa. Sir what is the difference between single diode, two diode, three and four diode models? Thanks
The difference comes in with the properties of the PV module. For example, in a 1 D model a diode is used to develop the understanding of the PN junction, while in 2 D model, the junction recombination effects are also included. In general, more the number of diodes, more complex and accurate the model is. However, it should be kept in mind that very detailed models are often not required at a system level and a good compromise between accuracy and convergence speed is desired.