AIXTRON new G10-GaN platform for GaN PE & RF application

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  • Опубликовано: 19 сен 2024

Комментарии • 1

  • @photinllc248
    @photinllc248 11 месяцев назад +1

    Interesting presentation!
    All this improved process control mainly driven by in-situ monitoring ( Reflectance + Pyrometry + Curvature), usually provided by LayTec.
    Next will be integration of PL Mapper, SurfScan and HR XRD into the G10 cluster tool, so all basic characterization could be done without taking wafer out of the tool... Even better if epi engineer could start next run and measure previous run, while buffer is grown, and update growth recipe during the process.
    BTW. Aixtron for 30 years resisted to give process engineers capability to modify running recipe (one need to terminate run, to modify recipe), and this option become available only ~2017..