Photodiode Working Principle - Semiconductor Device - Industrial Electronics

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  • Опубликовано: 22 янв 2025

Комментарии • 10

  • @Ekeeda
    @Ekeeda  5 лет назад +1

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  • @siriyanamadala1923
    @siriyanamadala1923 Месяц назад

    If we use p- and n- doping in photo diode.. compared to pn junction diode.. depletion width wider .. cuz it have to capture more light.. according to that it will produce electrical signals.. cuz photo diode is most sensitive device.. depletion region wider not only for the sake of reverse bias.. but also we reduce doping concentration

  • @SivaNarasapuram-z9h
    @SivaNarasapuram-z9h 11 месяцев назад

    Very good explanation mam easily understand English conversation thankyou somuch

  • @laxmanpoul196
    @laxmanpoul196 Год назад +1

    Thank you mam 😊

  • @24sauravwankhede-wb2yz
    @24sauravwankhede-wb2yz Год назад

    Excellent Mam 😊

  • @techmaster6012
    @techmaster6012 7 месяцев назад +1

    Depletion width not increase due to repeltion😂😂 it's is mainly due to when we decrease the carrier concentration 'Na' since NaXp=NdXn so, when we decrease the acceptor and doner concentration acc to this width gets wide😂😂😂😂😂

  • @anupredekar3846
    @anupredekar3846 2 года назад

    Very nice lecture

  • @24sauravwankhede-wb2yz
    @24sauravwankhede-wb2yz Год назад

    Mam Keep uploading both English and Hindi videos together on your channel so that all the doubts are removed

  • @siriyanamadala1923
    @siriyanamadala1923 Месяц назад

    If u don't know proper explanation pls kuch bhi mat bolo..