Electronic Devices: Einstein relation

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  • Опубликовано: 17 ноя 2024

Комментарии • 26

  • @biplab_sinha_77
    @biplab_sinha_77 6 лет назад +2

    Thank you so much ....sir...
    Your videos help me a lot. .....
    Without your videos I may never pass my this Nano electronics subject...

  • @fire_3221
    @fire_3221 4 года назад +1

    Jahanpanah! Tussi great ho…❤❤

  • @mengzhenc3704
    @mengzhenc3704 6 лет назад +1

    AWESOME!
    The only explanation of Einstein Relation on my elec eng textbook is: go check ur physics textbook, lol

  • @surisk_3700
    @surisk_3700 7 лет назад +1

    is it the first lecture in series ?? From where to start, if I want to understand in detail the band structure, fermi level under different conditions

  • @shivanilahariya7017
    @shivanilahariya7017 8 лет назад +2

    when we r taking conc gradient zero then why Ei is nt parallel to Ef like simple n type semiconductor ?

  • @Mohanpreetk
    @Mohanpreetk 27 дней назад

    Aare you neso academy sir

  • @papiyamondal2064
    @papiyamondal2064 4 года назад +2

    Derivation starts at 4:45

  • @romance177
    @romance177 9 лет назад +2

    why when semiconductor is at equilibrium (Jndrift + Jndiff = 0), Fermi Energy is Constant?....or in other words, why when there is no current in the semiconductor Ef is constant with respect to x?...thanks

    • @rahulvashistha8792
      @rahulvashistha8792 9 лет назад +4

      +jj Suppose if its not constant and changing with respect to x there will we some concentration gradient and due to which again there will be generation of the diffusion current. hence it is constant so as to make conc. gradient=0.

    • @romance177
      @romance177 9 лет назад

      Rahul Vashistha Thank you for your reply

    • @coolwinder
      @coolwinder 4 года назад

      @@rahulvashistha8792 Could you write more detailed explanation?

  • @shubhamnayak9369
    @shubhamnayak9369 6 лет назад

    Why you stopped uploading videos??

  • @linkmaster959
    @linkmaster959 7 лет назад +1

    Shouldnt when Ef- Ei is small the e- concentration is higher?

  • @shivanilahariya7017
    @shivanilahariya7017 8 лет назад

    will u explain how conc. gradient is related to fermi level and why fermi level shifts up in n type semiconductor??
    acc . to me when we r adding n type impurity then no. of electrons r incresing in VB so now also the probability of finding electron below intrinsic fermi level is 1, so der shoulb b no need to shift it up....

    • @ayooshsharma529
      @ayooshsharma529 8 лет назад

      watch video from lecture 8 you will understand

    • @shivanilahariya7017
      @shivanilahariya7017 8 лет назад

      i've watched d whole series.....

    • @unfilteredlife6272
      @unfilteredlife6272 7 лет назад

      donner energy level is not lies in VB
      actually it is closer to the CB so at room temperature they have energy to get into cb that's why possibility of finding e increase in cb

  • @saivarshith3643
    @saivarshith3643 3 года назад

    Sir can u share pdf notes

  • @張皓翔-t9q
    @張皓翔-t9q 9 лет назад

    +1

  • @詹Tony
    @詹Tony 9 лет назад

    電子三乙的+1

    • @vinson123
      @vinson123 9 лет назад

      樓上該不會是電子傳奇甲洨哥 久仰了

    • @TheJonathan831214
      @TheJonathan831214 9 лет назад

      +黃文杰 +詹季燁 兩個一樣的人欸0.0好神奇

    • @Upgradezz
      @Upgradezz 4 года назад

      Konnichiwa