Transistor technologies for RF power amplifiers by Peter Asbeck

Webinar Series by Leading IEEE Electron Device Luminaries
Jointly Organized by
IEEE EDS Delhi Chapter (New Delhi, India) ; DBT Star College Status Program, Deen Dayal Upadhyaya College, University of Delhi ; The National Academy of Sciences India - Delhi Chapter
June 21, at 8:30 am San Diego time i.e. 09:00 pm Indian Standard time
Transistor technologies for RF power amplifiers
Peter Asbeck
Prof Emeritus, ECE
Center for Wireless Communications, California Institute for Telecommunications and Information Technology
Peter Asbeck joined the UCSD faculty in 1991. He received his Ph.D. from MIT in 1975. He worked at the Sarnoff Research Center in Princeton, NJ and Philips Laboratory in Briarcliff Manor, NY, before joining the Rockwell International Science Center (Thousand Oaks, CA) in 1978. While there, he carried out pioneering work in the area of heterojunction bipolar transistors, including development of high-speed devices and circuits based on III-V compounds and heterojunctions. He stayed there until joining UCSD in 1991. He currently leads the UCSD High-Speed Device Group, including work on HBT and HFET devices, Silicon on Sapphire (SOS) technologies, power amplifier architectures and characterization, and opto-electronic interface circuits. He was elected to the National Academy of Engineering (NAE) in 2007. Asbeck is also on the Executive Committee of UCSD's Integrated Technologies Laboratory (ITL).

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Professor Asbeck is such a gem!