Please answer this...!!!! When writing the drain cent for the distance 'v'.....ie. v*Qch(dense).....how you substituted v(the random length) as u(dV/dx) (charge velocity)...????????
Is it correct to say that the Gate voltage increases the ABILITY for the transistor to create a current, whereas the Drain and Source voltages control the actual current flow?
Gate voltage increases the ability for the transistor to create a channel, whereas the Drain and Source terminal voltages regulates the actual current flow along the channel.
bro that is current density na so with respect a particular dl element at that point current is dq/dt so in 1 second how much charge is flowing so that length got converted to Velocity!!
v =uE; where v is velocity; But while deriving Id ,v is considered as small length of channel.how velocity equation is substituted in the place of length?
This v is not as velocity, this distance is velocity times to 1 second (we can call it v meter). Always in this kind of problems, they consider this distant to study the what happens to the charge inside of this volume in the frame of one second. what volume? The volume with the size of v meter (v times one second) times W times in the thickness of the channel. Then he explains more, in one second later all of the charges inside of this volume (=Qden*(v meter)) is passing through the rectangular interface with the width of W and length equal to the thickness of the channel. Because we know that all of the electrons in the frame of one second they shift v meter to the right. so all of the charges inside of that volume one second before they are passing from that interface in this time of one second.
at 48:45 you derivate V(x) ... as if it were a lineal function as V... but you said that we don´t know what form V(x) has... so v(x) is a linear expression ?
Hi. I don't understand the meaning of your question. First, prof. didn't derivate it, he integrated it. Also, when you integrate terms, being lineal or not don't matter. To avoid integrating V with respect of x, he just multiplied dx (I_D * dx = u_n * w * C_ox * (V_gs-V_th-v(x)) * dv )
So as to avoid the construction of any kind of diode or rectifier we usually use n type heavily doped//// And also because we want to have a good contact with the source wire and the part of silion substrate. Happy to help.
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At the top right sketch at the start of the video, shouldn't D(rain) and G(ate) symbols be reversed? I think prof. misplaced them.
yes
it doesnt really matter, they're symmetric up till this point of the course atleast
Why didn't I find out about these videos sooner ?
You are the father of us!
7:10 Anyone noticed Drain & Gate are terminals are marked incorrectly ?
yes I cam here looking for this comment
Please answer this...!!!!
When writing the drain cent for the distance 'v'.....ie. v*Qch(dense).....how you substituted v(the random length) as u(dV/dx) (charge velocity)...????????
did you get its answer?.i have same doubt
he mention that in unit time it moves v mtrs.
simplified and easy to understand
An engineer is a man or women who isn't getting tired to draw the MOSFET structure!
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Love from 🇳🇵🇳🇵
Is it correct to say that the Gate voltage increases the ABILITY for the transistor to create a current, whereas the Drain and Source voltages control the actual current flow?
Gate voltage increases the ability for the transistor to create a channel, whereas the Drain and Source terminal voltages regulates the actual current flow
along the channel.
@40:43 v is considered as length . But @44:30 same v is substituted as velocity . Can someone explain this !!?
he said v is length when takes a snapshot ,it means at a moment, but its is still velocity
velocity=length/time.Current I=q/t. He said t=unit time=say 1 sec. so velocity is equal to length
bro that is current density na so with respect a particular dl element at that point current is dq/dt so in 1 second how much charge is flowing so that length got converted to Velocity!!
If I meet you I will just simply touch your foot and say a very big thank you sir
Correction: 10:04 It would be better to write $Q = CV_G$ or $Q = CV_{GS}$ using the actual value of V in this case.
Sir can you make a video on cascode Loads and start up circuit with Mos technology I'm following your Book
My college professor read the slide without showing how to derive it: Well this is the drain current formula...
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Awesome :)
Does Prof. Behzad Razavi teach Digital Electronics Courses also? If yes, where can I get them?
he's an RF guy.
@@karamany9870 Ok
What a man 🙆🔥
v =uE; where v is velocity; But while deriving Id ,v is considered as small length of channel.how velocity equation is substituted in the place of length?
This v is not as velocity, this distance is velocity times to 1 second (we can call it v meter). Always in this kind of problems, they consider this distant to study the what happens to the charge inside of this volume in the frame of one second. what volume? The volume with the size of v meter (v times one second) times W times in the thickness of the channel. Then he explains more, in one second later all of the charges inside of this volume (=Qden*(v meter)) is passing through the rectangular interface with the width of W and length equal to the thickness of the channel. Because we know that all of the electrons in the frame of one second they shift v meter to the right. so all of the charges inside of that volume one second before they are passing from that interface in this time of one second.
@@samanzarbakhsh7923 Thankyou so much for ur explanation
why c0x is not considered as a function v(x) when there is drain voltage ? I guess it must vary with x
Cox can't be function of V(x) as Cox is constant. It doesn't change with x
sir what do you mean when you say the mosfet device is ON with Vg less than Vth ? what significance does it have if there is no current ?
No, sir has said MOSFET device is ON when Vg is greater than vth not less than. And he said it happens in MOSFET only not in BJT.
And there is no current bcoz vd is zero so no current is there
when Vgs > Vth, Vs=Vd=0 won't flow current(it's nothing but capacitor)
how the current flows in capacitor when we apply positive voltage??? 10:00
Here in this case, gate - poly - substrate form the capacitor, the current flow is considered across the the drain - substrate - source.
at 48:45 you derivate V(x) ... as if it were a lineal function as V... but you said that we don´t know what form V(x) has... so v(x) is a linear expression ?
Hi. I don't understand the meaning of your question.
First, prof. didn't derivate it, he integrated it. Also, when you integrate terms, being lineal or not don't matter.
To avoid integrating V with respect of x, he just multiplied dx (I_D * dx = u_n * w * C_ox * (V_gs-V_th-v(x)) * dv )
at 45:00 why for distance (v) substituted the velocity equation? Can anyone help me, please
because at the same time both sides are divided by a unit time, making the Q become I and the distance (v) become velocity (v)
@@nomqn1861 thank you
can anyone explain why we are choosing n+ (heavily doped )....i m not clear at that point so if anyone had clear about that point pls explain
just bcaz to make a grt bond between p type substrate and n type material for easily current conduction
So as to avoid the construction of any kind of diode or rectifier we usually use n type heavily doped//// And also because we want to have a good contact with the source wire and the part of silion substrate. Happy to help.
In the graph of Id vs Vds, what maximum value of Vgs can one use?
the maximum value of Vgs can not exceed your supply voltage that is Vdd . obviously you can give give the input that is more than the supply voltage
VGS is a constant value through out the experiment assumed to be greater than the VTH so yeah it can be any value greater than VTH.....
Please, Does anyone know this in which chapter?
Why I_D is integrated when it is constant ?
Actually he didn't integrate the current, he took it out of the integration because it is constant.
limit of integration should be vg to vg-vd na?
No, since V(x) is a voltage difference across source and drain, integration at the right hand should be from 0 to V_DS.
10:04 It would be better to write $Q = V_G$ or $Q = V_{GS}$ using the actual value of V in this case.
55:44
59:51 No
56:49
ohh this is way before covid 19. No problem!