Видео

Here is the recording of the Bodo's Power Systems Expert Talk on GaN. We would like to thank our participants: 1. Alex Lidow, EPC 2. Michael Basler, Fraunhofer IAF 3. Simon Li, GaNPower International

00:00 Welcome - Bodo Arlt 00:12 Dr. Peter Friedrichs - Infineon 06:22 Guy Moxey - Wolfspeed 13:44 Aly Mashaly - ROHM 19:00 Virgiliu Botan - Hitachi Energy 25:37 Dr. Kevin Speer - Microchip Technology 32:54 Richard Zhang - Alpha & Omega 40:35 Mechele Macauda - STMicroelectronics 46:29 Closing - Bodo Arlt

00:00 Welcome - Bodo Arlt 00:58 Dr. Evangelos Theodossiu - Vincotech 07:11 Eugen Stumpf - Mitsubishi Electric 13:27 Dr. Mrinal K. Das - onsemi 21:20 Christian Reuter - Fuji Electric 28:10 Pierre Delatte - CISSOID 35:15 Ramanan Natarajan - Qorvo 44:05 Carlos Silva - WeEn Semiconductors 49:50 Stefan Häuser - Semikron Danfoss

00:00 Welcome - Bodo Arlt 00:18 Dr. Thomas Neyer - Infineon 07:02 Alex Lidow - EPC 14:10 Philip Zuk - Transphorm 23:03 Tamara Baksht - VisIC Technologies 31:03 Balu Balakrishnan - Power Integrations 40:20 Llew Vaughan-Edmunds - Navitas 47:25 Dilder Chowdhury - Nexperia 56:33 Harald Parzhuber - Texas Instruments 1:01:56 Giorgia Longobardi - Cambridge GaN Devices 1:11:21 Closing - Bodo Arlt

We would like to thank our participants: 1. Federico Unnia, EPC 2. Pradeep Kulkarni, Microchip 3. Muzaffer Albayrak, Wolfspeed

Executing real-time simulations with a fixed time step presents a challenge for the calculation of discrete switching events in power electronic converters. This problem is particularly evident with DC/DC converters such as the Dual-Active Bridge (DAB) or LLC operating with wide-bandgap devices at high switching frequencies where the simulation time step is in the range of the switching period....

The modeling of the conducted EM Emissions of a synchronous Buck is demonstrated how to predict the emitted spectrum. The methodology takes the layout implementation of the converter stage into account, based on a commercially available EM extraction tool. This solution benefits from a respective switch model included in the software, offering a fast representation of the switching behavior wit...

Wide bandgap semiconductors are found in many different types of power applications and lead the way to a sustainable future. Learn all about the requirements and considerations for precision power analysis of wide bandgap semiconductors and meet one of our Precision Makers during the presentation and live Q&A session. Michael Rietvelt’s presentation on the Test, Measurement & Simulation-Day at...

Tektronix Keithley 4200A-SCS high performance parameter analyzer enables to accelerate research, reliability and failure analysis studies of semiconductor devices, materials and process development. Andrea Vinci’s presentation on the Test, Measurement & Simulation-Day at Bodo’s 2022 WBG Event. He is Technical Marketing Manager - EMEA at Tektronix.

We would like to thank our participants: 1. Andrea Vinci, Tektronix 2. Michael Rietvelt, Yokogawa

We would like to thank our participants: 1. Niklaus Felderer, Plexim 2. Simon Muff, Keysight Technologies

Active components made of WBG materials exhibit outstanding electrical and physical performance that is well documented and understood. This presentation will cite examples of advances in capacitors that allow WBG active devices to operate in more ideal conditions and fulfill their maximum performance capabilities. Examples of reduced parasitic loss capacitors are shown in RF applications such ...

The use of wide band gap devices like GaN or SiC require new passive components, operated at elevated temperature and higher switching frequencies. SDU conducts research for new capacitor technologies like new polymer Aluminium electrolytic capacitors for voltage over 400 V or new dielectric materials for metallized film capacitors with increased dielectrically constants and a better thermal st...

Christopher Rocneanu’s presentation on the Passives & Magnetics-Day at Bodo’s 2022 WBG Event. He is VP of Business Development at IQ Evolution GmbH.

Gate Driver Auxiliary Supply for SiC-based applications

E-CAP™: The Next Frontier in Capacitor Technology

Benefits of .XT interconnection technology for Discrete Power devices

Magnetics Optimization - The fast and reliable way

Passives for Power: Measuring with Large Signal Excitation

Efficient, Economical Choices of Magnetic Materials for SiC an GaN designs

Here is the recording of our Live Q&A (L8) from my Wide Bandgap Online Event on the third day.

Here is the recording of our Live Q&A (L9) from my Wide Bandgap Online Event on the third day.

Here is the recording of our Live Q&A (L10 from my Wide Bandgap Online Event on the third day.

What is new in Gallium Nitride and Silicon Carbide technologies for power electronics?

GaN IC Roadmaps

Vertical GaN "Technology of Future" - Now a Reality with NexGen Power Systems

Power GaN technology for mainstream power conversion applications

Extending the benefits of GaN solutions from power delivery to other industrial applications

Continued GaN Adoption Requires Innovation